2SK3326

Effective Inventory3,703

Power Field-Effect Transistor, 10A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN

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2SK3326 DataSheet

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Rapid Quote

Please submit RFQ for 2SK3326 or email to us: Email: [email protected], we will contact you in 12 hours.

2SK3326 Description

The 2SK3326 is a NPN power transistor from Renesas, designed for high-frequency applications in various industries. This device features a high current gain and low saturation voltage, making it suitable for use in amplifiers, switching circuits, and other high-power applications.

Pin Details

The 2SK3326 is a power transistor with 3 pins for input, output, and ground connections. It includes:

  • Pin 1 (B): Base
  • Pin 2 (C): Collector
  • Pin 3 (E): Emitter

Features

  • High Current Gain: Offers a high current gain, making it suitable for use in amplifiers and switching circuits.
  • Low Saturation Voltage: Features a low saturation voltage, reducing power consumption and heat generation.
  • High-Frequency Operation: Designed for high-frequency applications, ensuring reliable performance in various industries.

Applications

The 2SK3326 is commonly used in amplifiers, switching circuits, and other high-power applications where a high current gain and low saturation voltage are required.

Where to Use:

  • Aerospace and defense systems
  • Automotive electronics
  • Industrial automation systems
  • Medical devices
  • Radar and communication systems

Manufacturer

The 2SK3326 is manufactured by Renesas, a global leader in semiconductor technology. It falls under the category of power transistors, which are designed to facilitate high-power applications in various industries.

Packages

The 2SK3326 comes in a TO-3 package, making it suitable for surface-mount technology and through-hole mounting options.

Equivalent Parts of 2SK3326

  • 2SA1325: A comparable power transistor from Renesas with similar features and performance.
  • BC556B: An alternative power transistor from ON Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Part Package Code TO-220AB Pin Count ! 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 10.7 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ! ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 40 A
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Finish TIN LEAD Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SK3326 PDF Download

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