2SK2796L-E

Effective Inventory4,924

Nch Single Power Mosfet 60V 5A 160Mohm DPAK(L)-(1)/To-251, DPAK(L)-(1), /Tube

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2SK2796L-E DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for 2SK2796L-E or email to us: Email: [email protected], we will contact you in 12 hours.

2SK2796L-E Details

Features• Low on-resistance   RDS(on) = 0.12 Ω typ.• 4 V gate drive devices.• High speed switching

Key Features

  • Low on-resistance
  • RDS(on) = 0.12 Ω typ.
  • 4 V gate drive devices.
  • High speed switching

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Part Package Code DPAK(L)-(1)
Pin Count ! 4 Reach Compliance Code compliant
ECCN Code EAR99 Date Of Intro 1996-10-01
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code R-PSIP-T3
JESD-609 Code e6 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ! ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style IN-LINE Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 20 W Pulsed Drain Current-Max (IDM) 20 A
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Finish TIN BISMUTH Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SK2796L-E PDF Download

FAQs

What is 2SK2796L-E?

The 2SK2796L-E is a power MOSFET transistor designed for high-voltage applications. It is commonly used in power supply circuits, motor control, and electronic switching applications where high power handling and efficiency are required.

How Does 2SK2796L-E Work?

The 2SK2796L-E operates as a field-effect transistor (FET) where the output current is controlled by the gate-source voltage. By varying the gate voltage, the transistor can switch and regulate high power signals efficiently. It offers low on-resistance and high breakdown voltage for robust performance in demanding applications.

How Many Pins does 2SK2796L-E have and What are the Functions of the Pinout Configuration?

The 2SK2796L-E is housed in a TO-220 package, which typically consists of 3 pins. The pinout configuration includes:

  • G (Gate): Controls the flow of current between the source and drain.
  • S (Source): Connected to the ground or common reference point.
  • D (Drain): Allows the current to flow when the transistor is in the ON state.

What are the Pros and Cons of 2SK2796L-E?

Pros:

  • High Voltage Rating: Suitable for high-voltage applications.
  • Low On-Resistance: Provides efficient power handling with minimal losses.
  • Robust Construction: Designed for reliability in demanding environments.
  • TO-220 Package: Easy to mount and heatsink for thermal management.

Cons:

  • Gate Capacitance: May require careful consideration for driving the gate at high frequencies.
  • Space Consideration: TO-220 package may be larger than other SMD alternatives.

Are There Any Equivalents/Alternatives to 2SK2796L-E for Recommendation?

  • Alternatives to the 2SK2796L-E include the IRF540N from Infineon, and the STP75NF75 from STMicroelectronics.
  • Equivalents to the 2SK2796L-E are the 2SK2611 from Renesas and the FQP50N06L from Fairchild Semiconductor.

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