2SK2586-E
The 2SK2586 is a N-channel Single Power Mosfet with a voltage rating of 60V, a current rating of 60A, and a resistance of 10Mohm packaged in TO-3P2SK2586-E
The 2SK2586 is a N-channel Single Power Mosfet with a voltage rating of 60V, a current rating of 60A, and a resistance of 10Mohm packaged in TO-3P
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Manufacturer Part # : 2SK2586-E
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Package/Case: TO-3PN
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Part Status : NRND
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Brand: Hitachi Metals
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Product Categories : Parity Generators and Checkers
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2SK2586-E DataSheet

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Interested Parts
2SK2586-E Description
The 2SK2586-E is a high-performance Power MOSFET from Renesas Electronics, designed for efficient and reliable power management in a variety of applications. This device features low resistance design, safe switching levels, and optimized on-resistance, making it ideal for industrial automation, automotive systems, and other demanding environments.
Features
- High Speed Operation: The 2SK2586-E offers high-speed operation and quick switching speed for efficient power handling.
- Low Resistance Design: It features a low resistance design for optimized energy efficiency and reduced heat generation.
- Safe Switching Levels: The device provides safe switching levels, ensuring reliable performance in harsh environments.
- High Voltage Capability: It has high voltage capability, making it suitable for demanding applications requiring high power handling.
- Fast, Efficient Switching: The 2SK2586-E offers fast and efficient switching, minimizing energy waste and reducing the risk of thermal runaway.
Applications
The 2SK2586-E is commonly used in systems that require reliable power handling, such as industrial automation control systems, automotive power supplies, and high-power motor drives.
Where to Use:
- Industrial automation control systems
- Automotive power supplies
- High-power motor drives
- Building automation systems
- Renewable energy systems
Manufacturer
The 2SK2586-E is manufactured by Renesas Electronics, a leader in semiconductor technology. It falls under the category of Power MOSFETs, designed to facilitate efficient and reliable power management in various applications.
This product was developed to meet the growing demand for high-performance power handling solutions in industrial, automotive, and building automation systems, where features like low resistance design, safe switching levels, and optimized on-resistance are essential.
Packages
The 2SK2586-E comes in a package type of Transistor Outline, Vertical - PRSS0004ZE-A_, designed for efficient thermal dissipation and reduced space requirements.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | Not Recommended | Part Package Code | TO-3P |
Pin Count ! | 4 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Date Of Intro | 1995-07-01 |
Avalanche Energy Rating (Eas) | 174 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 60 A | Drain Current-Max (ID) | 60 A |
Drain-source On Resistance-Max | 0.016 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e2 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode ! | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 125 W |
Pulsed Drain Current-Max (IDM) | 240 A | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Finish | TIN COPPER |
Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Pkg. Type | TO-3P | Carrier Type | Tube |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is 2SK2586-E?
The 2SK2586-E is a high-speed switching N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-frequency switching applications. It is suitable for use in power supplies, inverters, and motor control systems that require efficient and fast switching of high currents.
How Does 2SK2586-E Work?
The 2SK2586-E operates by controlling the flow of current between the source and drain terminals using an electric field. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the source and drain. This switching action enables efficient control of high currents in fast-switching applications.
How Many Pins does 2SK2586-E have and What are the Functions of the Pinout Configuration?
The 2SK2586-E is housed in a standard TO-220 package. The pinout configuration includes:
- G (Gate): Controls the conduction of the MOSFET.
- D (Drain): Connects to the positive side of the load.
- S (Source): Connects to the ground or the negative side of the load.
What are the Pros and Cons of 2SK2586-E?
Pros:
- High-Speed Switching: Capable of fast switching actions suitable for high-frequency applications.
- High Current Handling: Designed to handle high currents, making it suitable for power electronics applications.
- Reliability: Offers stable and reliable performance in demanding operating conditions.
Cons:
- Drive Voltage Sensitivity: May require careful consideration of gate drive voltage for optimal performance.
- Heat Dissipation: High-current applications may require additional heat management considerations.
Are There Any Equivalents/Alternatives to 2SK2586-E for Recommendation?
Alternatives to the 2SK2586-E include the IRF540N from Infineon and the FQP30N06L from Fairchild Semiconductor.
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Price details
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