2SK1489(Q)
TO-3PL packaged N-Channel MOSFET with a maximum voltage of 1000V and a maximum current of 12A2SK1489(Q)
TO-3PL packaged N-Channel MOSFET with a maximum voltage of 1000V and a maximum current of 12A
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Manufacturer Part # : 2SK1489(Q)
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Package/Case: TO-3PL-3
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Part Status : OBSOLETE
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Brand: Toshiba
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Product Categories : Single FETs, MOSFETs
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RoHS:
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2SK1489(Q) DataSheet
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2SK1489(Q) Details
The 2SK1489(Q) is a power MOSFET transistor designed for high-speed switching applications in electronic circuits. This transistor features a low on-state resistance and high breakdown voltage, making it suitable for power amplification and switching tasks. It is housed in a TO-3P package, providing robustness and thermal efficiency for various electronic designs.
Pinout
- 1 (G): Gate
- 2 (D): Drain
- 3 (S): Source
(Tip: For detailed pinout information, please refer to the corresponding datasheet.)
Key Features
- Low On-State Resistance: Provides efficient power conduction with minimal losses.
- High Breakdown Voltage: Ensures reliable operation under high voltage conditions.
- Fast Switching Speed: Designed for high-speed switching applications in electronic circuits.
- TO-3P Package: Features a TO-3P package for enhanced thermal performance and durability.
- High Power Handling Capacity: Capable of handling high power levels for various electronic tasks.
Application
- Power Amplification: Ideal for power amplification tasks in audio and signal processing systems.
- Switching Circuits: Used in high-speed switching circuits for rapid signal processing.
- Power Supply Units: Suitable for power supply units requiring efficient power switching capabilities.
Where to Use
The 2SK1489(Q) is recommended for applications that demand high-speed switching and efficient power handling. It is commonly utilized in power amplifiers, switching power supplies, and motor drive circuits for reliable performance.
How to Use
When using the 2SK1489(Q), connect the Gate, Drain, and Source pins to the corresponding circuit nodes. Ensure proper heat sinking for thermal management, especially during high power operation. Refer to the datasheet for detailed usage guidelines and thermal considerations.
Application Circuit
The application circuit diagram for the 2SK1489(Q) illustrates how to integrate the MOSFET transistor into your electronic system. It includes connections for gate control, power input, and output stages for efficient operation.
(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)
Equivalents
- IRF3205: A comparable power MOSFET transistor with similar characteristics and performance.
- BUT11A: An alternative high-speed switching transistor suitable for power applications.
Complementary
The 2SK1489(Q) can be complemented by the 2SJ201(P), offering a matched pair for improved circuit performance and symmetry in amplifier designs.
When selecting complementary transistors, ensure compatibility and complementary characteristics for optimal circuit operation.
Frequently Asked Questions
Q: What is the maximum power handling capacity of the 2SK1489(Q)?
A: The 2SK1489(Q) is capable of handling power levels up to [insert power rating] watts. Please refer to the datasheet for specific power ratings and operating conditions.
Q: Can the 2SK1489(Q) be used in audio amplifier circuits?
A: Yes, the 2SK1489(Q) is suitable for audio amplifier applications due to its high-speed switching and power handling capabilities. It can be used in audio amplifiers for efficient signal processing.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-3PL-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1 kV |
Id - Continuous Drain Current | 12 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 200 W |
Channel Mode | Enhancement | Series | 2SK1489 |
Brand | Toshiba | Configuration | Single |
Fall Time | 150 ns | Height | 26 mm |
Length | 20 mm | Product Type ! | MOSFET |
Rise Time ! | 100 ns | Factory Pack Quantity | 25 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 5 mm | Unit Weight | 0.245577 oz |
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Price details
Prices listed do not include VAT.
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