2SJ607

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Power Field-Effect Transistor, 83A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

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Service & Packaging

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2SJ607 DataSheet

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2SJ607 Description

The 2SJ607 is a robust power field-effect transistor from Renesas, designed for reliable power control in various applications. This device is ideal for industrial and automotive systems, featuring high current handling, low noise, and a wide operating temperature range.

Pin Details

The 2SJ607 is a P-channel power MOSFET with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.

Pin configuration

  • Pin 1 (GND): Ground
  • Pin 2 (VCC): Positive Power Supply
  • Pin 3 (A): Non-inverting Receiver Input/Driver Output
  • Pin 4 (B): Inverting Receiver Input/Driver Output
  • Pin 5 (RO): Receiver Output
  • Pin 6 (RE): Receiver Output Enable
  • Pin 7 (DE): Driver Output Enable
  • Pin 8 (DI): Driver Input

Features

  • High Current Handling: Handles high currents up to 83A for reliable power control.
  • Low Noise: Minimizes noise and electromagnetic interference (EMI) for stable operation.
  • Wide Operating Temperature Range: Operates efficiently between -40°C and +125°C, allowing it to function reliably in various environmental conditions.

Applications

The 2SJ607 is commonly used in systems that require reliable power control, such as industrial automation, automotive electronics, and renewable energy applications.

Where to Use:

  • Industrial automation systems
  • Automotive electronics
  • Renewable energy applications
  • Power supplies
  • Motor control systems

Manufacturer

The 2SJ607 is manufactured by Renesas, a global leader in semiconductor technology. It falls under the category of power field-effect transistors, offering high-performance and reliability for various applications.

Packages

The 2SJ607 comes in an SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of 2SJ607

  • STP16NF06: A comparable power MOSFET from STMicroelectronics with similar features and performance.
  • FDC6630: An alternative power MOSFET from Fairchild Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Part Package Code TO-220AB Pin Count ! 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 250 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 83 A Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Mode ! ENHANCEMENT MODE Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL Pulsed Drain Current-Max (IDM) 332 A
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Finish TIN LEAD Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SJ607 PDF Download

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