2SJ378

Effective Inventory5,866

5A, 60V Transistor

  • Manufacturer Part # : 2SJ378

  • Package/Case: TO-262

  • Brand: Toshiba

  • Product Categories : Memory

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2SJ378 DataSheet

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2SJ378 Details

The 2SJ378 is a high-performance power MOSFET from Toshiba, designed for robust and reliable operation in demanding applications. This device features low on-resistance, high breakdown voltage, and low input capacitance, making it suitable for high-speed switching and high-power applications.

Pinout

  • Drain (D): The drain pin connects to the positive power supply.
  • Source (S): The source pin connects to the negative power supply or load.
  • Gate (G): The gate pin controls the MOSFET's operation, connecting to the control signal.

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • Low On-Resistance (RDS(on)): The 2SJ378 features a low on-resistance of 0.28 ohm, reducing power loss and increasing efficiency.
  • High Breakdown Voltage (BVdss): With a breakdown voltage of 200V, this MOSFET can handle high-voltage applications with ease.
  • Low Input Capacitance: The 2SJ378 has a low input capacitance of 150pF, minimizing switching losses and improving system performance.

Applications

The 2SJ378 is suitable for various applications that require high-performance power MOSFETs, including:

  • Power Supplies: The 2SJ378 can be used in power supplies to regulate voltage and current.
  • Motor Control: This MOSFET is suitable for motor control applications, such as DC-DC converters and motor drives.
  • Audio Equipment: The 2SJ378 can be used in audio equipment, such as amplifiers and speakers, to provide high-quality power switching.

Where to Use

The 2SJ378 is suitable for applications that require high-performance power MOSFETs, including:

  • Automotive Systems: This MOSFET can be used in automotive systems, such as motor control and power supplies.
  • Aerospace Applications: The 2SJ378 is suitable for aerospace applications that require high-reliability and high-performance power switching.

How to Use

To use the 2SJ378, connect the drain pin to the positive power supply, the source pin to the negative power supply or load, and the gate pin to the control signal. Ensure proper operating conditions, such as voltage and current ratings, to ensure reliable operation.

Application Circuit

The application circuit diagram for the 2SJ378 illustrates how to connect the MOSFET to a power supply and load. It includes connections for the drain, source, and gate pins, ensuring proper operation and reliable power switching.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • STP16NF06L: A similar power MOSFET from STMicroelectronics offering comparable features and performance.
  • FQP50N60C: An alternative power MOSFET from Fairchild Semiconductor with equivalent functionality.

Complementary

The 2SJ378 can be complemented by the 2SJ380, which offers additional features such as higher current handling and enhanced thermal performance, suitable for more demanding applications.

When selecting complementary MOSFETs, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Pin Count ! 3 ECCN Code EAR99
HTS Code ! 8541.29.00.95 Avalanche Energy Rating (Eas) 273 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 5 A Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.28 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.3 W Power Dissipation-Max (Abs) 1.3 W
Pulsed Drain Current-Max (IDM) 20 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SJ378 PDF Download

FAQs

What is 2SJ378?

The 2SJ378 is a P-channel power MOSFET transistor designed for high-speed switching applications in electronic circuits. It is commonly used in power supply, motor control, and audio amplifier circuits.

How Does 2SJ378 Work?

The 2SJ378 works by controlling the flow of current between the source and drain terminals through the manipulation of the gate voltage. When a suitable voltage is applied to the gate, the transistor allows current to flow, enabling it to act as an electronic switch or amplifier in circuit applications.

How Many Pins does 2SJ378 have and What are the Functions of the Pinout Configuration?

The 2SJ378 is typically available in a TO-220 package, which consists of three pins:

  • Gate (G): Controls the conduction of the transistor when a voltage is applied.
  • Drain (D): Connects to the positive supply voltage or the load in the circuit.
  • Source (S): Connects to the ground or the return path of the load in the circuit.

What are the Pros and Cons of 2SJ378?

Pros:

  • High-Speed Switching: Suitable for applications requiring fast switching times.
  • Power Handling Capability: Capable of handling relatively high power levels.
  • Low On-State Resistance: Provides efficient current conduction with low voltage drop.

Cons:

  • Gate-Drive Considerations: Requires careful attention to gate-drive circuit design for optimal performance.
  • Controlled Voltage: Operation is dependent on the voltage applied to the gate terminal, requiring careful consideration in circuit design.

Are There Any Equivalents/Alternatives to 2SJ378 for Recommendation?

Equivalents to the 2SJ378 include the IRF9630 from Infineon Technologies and the STP3NB90 from STMicroelectronics. Alternatives with similar characteristics include the FQP27P06 from Fairchild Semiconductor and the SUP53P06 from Vishay Semiconductors.

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