2SJ378

Name: 2SJ378
Brand: Toshiba
Rating: 4.5 (10 reviews)
Author: Lisleapex

5A, 60V Transistor

5,866 Effective Inventory

2SJ378

Effective Inventory5,866

5A, 60V Transistor

Manufacturer Part # : 2SJ378
Package/Case: TO-262
Brand: Toshiba
Product Categories : Memory

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2SJ378 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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2SJ378 Details

The 2SJ378 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a low on-resistance and high input impedance. It is designed for use in various power management applications, such as power supplies, battery management, and load switches. The 2SJ378 has a drain current of 1.5A and a drain-source voltage of -30V, making it suitable for low to medium power applications. The gate-source threshold voltage is typically around -2V, allowing for easy control of the transistor with standard logic level signals.This MOSFET is housed in a small surface-mount package, making it easy to integrate into compact designs. The compact size, along with its low on-resistance, helps reduce power losses and improve efficiency in systems where it is used.

Key Features

Low on-resistance
High breakdown voltage
Low input capacitance
High-speed switching
Low leakage current
SMD package
High reliability
Enhanced thermal performance
RoHS compliant

Application

Audio amplification
Power management
Battery management systems
Power supplies
Motor control
LED lighting
Automotive electronics
Switching applications
Consumer electronics
Industrial control systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Pin Count !	3	Reach Compliance Code
ECCN Code	EAR99	HTS Code !	8541.29.00.95
Avalanche Energy Rating (Eas)	273 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (Abs) (ID)	5 A
Drain Current-Max (ID)	5 A	Drain-source On Resistance-Max	0.28 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSIP-T3
Number of Elements	1	Number of Terminals	3
Operating Mode !	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	IN-LINE	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	P-CHANNEL	Power Dissipation Ambient-Max	1.3 W
Power Dissipation-Max (Abs)	1.3 W	Pulsed Drain Current-Max (IDM)	20 A
Qualification Status !	Not Qualified	Surface Mount !	NO
Terminal Form !	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SJ378 PDF Download

FAQs

What is 2SJ378?

The 2SJ378 is a P-channel power MOSFET transistor designed for high-speed switching applications in electronic circuits. It is commonly used in power supply, motor control, and audio amplifier circuits.

How Does 2SJ378 Work?

The 2SJ378 works by controlling the flow of current between the source and drain terminals through the manipulation of the gate voltage. When a suitable voltage is applied to the gate, the transistor allows current to flow, enabling it to act as an electronic switch or amplifier in circuit applications.

How Many Pins does 2SJ378 have and What are the Functions of the Pinout Configuration?

The 2SJ378 is typically available in a TO-220 package, which consists of three pins:

Gate (G): Controls the conduction of the transistor when a voltage is applied.
Drain (D): Connects to the positive supply voltage or the load in the circuit.
Source (S): Connects to the ground or the return path of the load in the circuit.

What are the Pros and Cons of 2SJ378?

Pros:

High-Speed Switching: Suitable for applications requiring fast switching times.
Power Handling Capability: Capable of handling relatively high power levels.
Low On-State Resistance: Provides efficient current conduction with low voltage drop.

Cons:

Gate-Drive Considerations: Requires careful attention to gate-drive circuit design for optimal performance.
Controlled Voltage: Operation is dependent on the voltage applied to the gate terminal, requiring careful consideration in circuit design.

Are There Any Equivalents/Alternatives to 2SJ378 for Recommendation?

Equivalents to the 2SJ378 include the IRF9630 from Infineon Technologies and the STP3NB90 from STMicroelectronics. Alternatives with similar characteristics include the FQP27P06 from Fairchild Semiconductor and the SUP53P06 from Vishay Semiconductors.