2SJ278MYTR-E

Renesas Electronics product 2SJ278MYTR-E
7,711 Effective Inventory

2SJ278MYTR-E

Effective Inventory7,711

Renesas Electronics product 2SJ278MYTR-E

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2SJ278MYTR-E DataSheet
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2SJ278MYTR-E Details

The 2SJ278MYTR-E is a Pch Single Power Mosfet -60V -1A 830Mohm Upak/Sc-62 from Renesas, designed for reliable power management in various applications. This device features high voltage and current ratings, making it suitable for industrial control systems, automotive electronics, and other demanding environments.

Pinout

  • Drain (D): The drain pin connects to the positive power supply voltage.
  • Source (S): The source pin connects to the negative power supply voltage or ground.
  • Gate (G): The gate pin is used for controlling the MOSFET's operation.

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

  • High Voltage Rating: The 2SJ278MYTR-E can withstand voltages up to -60V, making it suitable for high-voltage applications.
  • High Current Handling: This MOSFET can handle currents up to 1A, allowing for efficient power management in demanding systems.
  • Low On-Resistance: The device features a low on-resistance of 830Mohm, reducing energy losses and heat generation during operation.

Applications

  • Industrial Control Systems: The 2SJ278MYTR-E is suitable for industrial control systems requiring high voltage and current ratings, such as motor control and power supply applications.
  • Automotive Electronics: This MOSFET can be used in automotive electronics, including anti-lock braking systems (ABS), traction control systems (TCS), and other safety-critical applications.

Where to Use

The 2SJ278MYTR-E is suitable for use in various applications where high voltage and current ratings are required, including industrial control systems, automotive electronics, and other demanding environments.

How to Use

To use the 2SJ278MYTR-E, connect the drain pin to the positive power supply voltage, the source pin to the negative power supply voltage or ground, and the gate pin to a suitable control signal. Ensure proper operating conditions and follow the datasheet recommendations for optimal performance.

Application Circuit

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

  • STP16NF06L: A similar N-channel power MOSFET from STMicroelectronics offering comparable features and performance.
  • FQP50N60C: An alternative N-channel power MOSFET from Fairchild Semiconductor with equivalent functionality.

Complementary

The 2SJ278MYTR-E can be complemented by the 2SJ278MYTR-S, which offers a similar feature set and performance but with a different pinout configuration. When selecting complementary devices, ensure that their features and specifications align with your specific application requirements for optimal performance and compatibility.

Frequently Asked Questions

Q: What is the maximum voltage rating of the 2SJ278MYTR-E?

A: The maximum voltage rating of the 2SJ278MYTR-E is -60V.

Q: Can the 2SJ278MYTR-E be used in automotive applications?

A: Yes, the 2SJ278MYTR-E can be used in automotive applications where high voltage and current ratings are required, such as anti-lock braking systems (ABS) and traction control systems (TCS).

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type UPAK Carrier Type Embossed Tape

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2SJ278MYTR-E PDF Download

FAQs

What is 2SJ278MYTR-E?

The 2SJ278MYTR-E is a high-voltage, low on-resistance power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Renesas Electronics. It is suitable for applications requiring high power handling capability, low conduction losses, and efficient switching performance.

How Does 2SJ278MYTR-E Work?

The 2SJ278MYTR-E operates as a power MOSFET, utilizing its low on-resistance to minimize power losses during conduction. It can efficiently switch high voltages and currents with low gate drive requirements, making it ideal for power management applications.

How Many Pins does 2SJ278MYTR-E have and What are the Functions of the Pinout Configuration?

The 2SJ278MYTR-E is typically available in a TO-252 package with 3 pins:

  • GATE: Gate terminal for controlling the switching of the MOSFET.
  • DRAIN: Drain terminal for connecting to the power supply or load.
  • SOURCE: Source terminal for completing the circuit path.

What are the Pros and Cons of 2SJ278MYTR-E?

Pros:

  • High Voltage Handling: Capable of handling high voltages, suitable for power applications.
  • Low On-Resistance: Reduces conduction losses and improves efficiency.
  • Efficient Switching: Enables fast and efficient switching operations.
  • Compact Package: The TO-252 package offers a compact footprint for space-constrained designs.

Cons:

  • Heat Dissipation: May require proper heat sinking for high-power applications to manage thermal dissipation.
  • Gate Drive Consideration: Care must be taken with the gate drive voltage and current to ensure proper switching behavior.

Are There Any Equivalents/Alternatives to 2SJ278MYTR-E for Recommendation?

  • Equivalents to the 2SJ278MYTR-E include the IRF840 from Infineon and the FQP27P06 from Fairchild Semiconductor.
  • Alternatives to the 2SJ278MYTR-E are the STP36NF06L from STMicroelectronics and the NDP6020P from ON Semiconductor.

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