2SD2655WM-TL-E

Name: 2SD2655WM-TL-E
Brand: Renesas Electronics Corporation
Rating: 4.5 (10 reviews)
Author: Lisleapex

Advanced NPN transistor chip for high-power electronic system

5,354 Effective Inventory

2SD2655WM-TL-E

Effective Inventory5,354

Advanced NPN transistor chip for high-power electronic system

Manufacturer Part # : 2SD2655WM-TL-E
Package/Case: SOT23-3
Brand: Renesas Electronics Corporation
Product Categories : Parity Generators and Checkers

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2SD2655WM-TL-E DataSheet

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2SD2655WM-TL-E Details

The 2SD2655WM-TL-E is a NPN transistor from Toshiba Semiconductor, designed for high-power switching applications in electronic circuits. This transistor features high current and voltage ratings, making it suitable for various power control and amplification tasks. It is housed in a compact and thermally efficient package, ensuring reliable operation even in demanding environments.

Pinout

1 (E): Emitter
2 (B): Base
3 (C): Collector

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Power Handling: Capable of handling high currents and voltages for power applications.
Fast Switching Speed: Offers fast switching times for efficient performance.
Compact Package: Housed in a compact package for space-efficient circuit designs.
Thermal Efficiency: Designed for optimal heat dissipation to ensure reliability.
Wide Voltage Range: Operates over a wide voltage range for versatile applications.

Application

Power Amplification: Suitable for power amplification in audio and other electronic systems.
Switching Circuits: Used in high-power switching circuits for control and regulation.
Motor Control: Ideal for motor control applications requiring high-power handling.

Where to Use

The 2SD2655WM-TL-E is ideal for applications that demand high-power switching and amplification, such as audio amplifiers, motor controllers, and power supplies. It is a versatile transistor suitable for various electronic systems requiring efficient power handling.

How to Use

Integrate the 2SD2655WM-TL-E into your circuit by connecting the emitter, base, and collector pins to the corresponding circuit nodes. Ensure proper voltage and current ratings are within the transistor's limits. Utilize appropriate heat sinking methods and follow recommended circuit layouts for optimal performance. For detailed usage instructions, refer to the datasheet.

Application Circuit

The application circuit diagram for the 2SD2655WM-TL-E showcases how to incorporate the transistor into your electronic system for power switching and amplification. Proper connections and voltage levels are essential for reliable operation and performance.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

2N3055: A similar high-power NPN transistor with compatible specifications.
MJ15003: An alternative NPN transistor suitable for power applications.

Complementary

The 2SD2655WM-TL-E can be complemented by the 2SB2026WM-TL-E PNP transistor to create a complementary power amplifier circuit. Matching the characteristics of NPN and PNP transistors ensures balanced performance and efficient operation.

When designing complementary circuits, ensure proper matching and compatibility between NPN and PNP transistor pairs for optimal results.

Frequently Asked Questions

Q: What is the maximum power rating of the 2SD2655WM-TL-E?

A: The 2SD2655WM-TL-E has a maximum power handling capability of [XX] watts. For detailed specifications, refer to the datasheet for specific operating conditions.

Q: Can the 2SD2655WM-TL-E be used in audio amplifier circuits?

A: Yes, the 2SD2655WM-TL-E is suitable for audio amplifier applications requiring high-power output and efficient performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pkg. Type

MPAK

FAQs

What is 2SD2655WM-TL-E?

The 2SD2655WM-TL-E is a high-voltage, high-speed switching transistor designed by Toshiba. It is commonly used in power supply applications, motor control circuits, and electronic switching devices.

How Does 2SD2655WM-TL-E Work?

The 2SD2655WM-TL-E operates as a semiconductor device that allows or restricts the flow of current between its collector, emitter, and base terminals. It can rapidly switch on and off, making it suitable for high-speed switching applications and amplification of electrical signals.

How Many Pins does 2SD2655WM-TL-E have and What are the Functions of the Pinout Configuration?

The 2SD2655WM-TL-E is typically housed in a TO-252 or similar package. The pinout configuration includes:

Collector (C): The terminal that carries the main current flow.
Emitter (E): The terminal through which the current exits.
Base (B): The control terminal that governs the current flow between the collector and emitter.

What are the Pros and Cons of 2SD2655WM-TL-E?

Pros:

High Voltage Capability: Suitable for applications requiring high voltage handling.
High-Speed Switching: Enables rapid switching for efficient operation.
Reliable Performance: Offers stable and consistent performance in demanding conditions.
Compact Package: TO-252 package provides a space-efficient design.

Cons:

Heat Dissipation: May require additional heat sinking for high-power applications.
Complex Drive Circuit: Requires precise control of the base terminal for optimal performance.
Voltage and Current Limitations: Specific voltage and current ratings must be observed to prevent damage.

Are There Any Equivalents/Alternatives to 2SD2655WM-TL-E for Recommendation?

Similar alternatives to the 2SD2655WM-TL-E include the MJL1302A from ON Semiconductor and the 2SC5200 from Toshiba.
Equivalents to the 2SD2655WM-TL-E may vary by manufacturer and specific application requirements.