2SC3295
Small signal transistor with NPN polarity, capable of handling currents up to 150 mA and voltages up to 50 V2SC3295
Small signal transistor with NPN polarity, capable of handling currents up to 150 mA and voltages up to 50 V
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Manufacturer Part # : 2SC3295
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Package/Case: SOT-23
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Brand: Toshiba
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Product Categories : Single Bipolar Transistors
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2SC3295 DataSheet
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Interested Parts
2SC3295 Description
The 2SC3295 is a high-voltage NPN bipolar junction transistor used in power amplifier circuits, designed for reliable and efficient audio amplification applications.
Pin Details
The 2SC3295 is a discrete semiconductor component with the following pin configuration:
- Pin 1 (B): Base
- Pin 2 (C): Collector
- Pin 3 (E): Emitter
- Pin 4 (GND): Ground
- Pin 5 (VCC): Positive Power Supply
Features
- High Breakdown Voltage: The 2SC3295 has a high breakdown voltage of 180V, making it suitable for high-voltage applications.
- High Current Capability: It can handle high currents up to 1.5A, allowing for efficient power amplification.
- Low Saturation Voltage: The transistor has a low saturation voltage of 0.35V, reducing power consumption and heat generation.
- Low Noise Figure: It features a low noise figure of 0.9dB, ensuring minimal distortion in audio signals.
Applications
The 2SC3295 is commonly used in audio amplifier circuits for applications such as power amplifiers, audio equipment, and industrial control systems.
Where to Use:
- Audio equipment
- Industrial control systems
- Power amplifiers
- Automotive systems
- Medical devices
Manufacturer
The 2SC3295 is manufactured by Mitsubishi Electric, a leading global provider of semiconductor components and solutions.
Packages
The 2SC3295 comes in a TO-3 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of 2SC3295
- 2SA1944: A comparable NPN bipolar junction transistor from Toshiba with similar features and performance.
- BC557: An alternative NPN bipolar junction transistor from ON Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | 2SC3295 | Pbfree Code | No |
Rohs Code | No | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | TOSHIBA CORP | Part Package Code | SOT-23 |
Package Description | SMALL OUTLINE, R-PDSO-G3 | Pin Count ! | 3 |
ECCN Code | EAR99 | Collector Current-Max (IC) | 0.15 A |
Collector-Emitter Voltage-Max | 50 V | Configuration | SINGLE |
DC Current Gain-Min (hFE) | 600 | JEDEC-95 Code | TO-236 |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 125 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.15 W |
Qualification Status ! | Not Qualified | Surface Mount ! | YES |
Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form ! | GULL WING |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Transition Frequency-Nom (fT) | 250 MHz |
VCEsat-Max | 0.25 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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