2SC2618RCTL-E
Device code 2SC2618RCTL-E designed for use in various electronic circuits requiring NPN transistors2SC2618RCTL-E
Device code 2SC2618RCTL-E designed for use in various electronic circuits requiring NPN transistors
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Manufacturer Part # : 2SC2618RCTL-E
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Package/Case: SOT
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Product Categories : Parity Generators and Checkers
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2SC2618RCTL-E DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
2SC2618RCTL-E Details
The 2SC2618RCTL-E is a high-frequency transistor designed for use in various RF applications. It has a power dissipation of 1.6 watts and a collector current of 0.1 amps. The transistor is housed in a surface mount package, making it ideal for compact and space-constrained circuit designs.The 2SC2618RCTL-E features a high power gain and low noise figure, making it well-suited for use in RF amplification circuits. It is also designed for high-frequency operation, with a maximum frequency of 6 GHz.This transistor is built with epitaxial planar construction and gold metallization for improved reliability and performance. It has a low thermal resistance and excellent temperature stability, allowing for reliable performance over a wide range of operating conditions.
Key Features
- High breakdown voltage of 250V
- Collector current of 150mA
- Power dissipation of 200mW
- Low noise figure
- High reliability and performance
- High gain of 300
Application
- RF power amplifiers
- Communication systems
- Broadcast transmitters
- Radar systems
- Wireless infrastructure
- Satellite communications
- Medical equipment
- Industrial control systems
- High frequency applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Rohs Code | Yes |
Part Life Cycle Code | End Of Life | Part Package Code | MPAK |
Pin Count ! | 3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Date Of Intro | 1997-08-01 |
Collector Current-Max (IC) | 0.5 A | Collector-Emitter Voltage-Max | 35 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 100 |
JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e6 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 0.15 W |
Qualification Status ! | Not Qualified | Surface Mount ! | YES |
Terminal Finish | TIN BISMUTH | Terminal Form ! | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 20 |
Transistor Application | AMPLIFIER | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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