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2PG002
Insulated Gate Bipolar Transistor, 40A I(C), 410V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN
2PG002
Insulated Gate Bipolar Transistor, 40A I(C), 410V V(BR)CES, N-Channel, TO-220AB, TO-220F, 3 PIN
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Manufacturer Part # : 2PG002
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Package/Case: TO-220
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Brand: Panasonic Electric Works
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Product Categories : Single IGBTs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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2PG002 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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THVD1450DRBR Description
The THVD1450DRBR is a robust semiconductor component from Panasonic Electronic Components, designed for reliable data transmission in noisy environments. This device is ideal for industrial communication applications, featuring high ESD protection, low power consumption, and a wide operating temperature range.
Pin Details
The THVD1450DRBR is a N-Channel Insulated Gate Bipolar Transistor (IGBT) with 40A I(C), 410V V(BR)CES. It has three pins: Collector, Base, and Emitter.
Features
- High ESD Protection: Offers up to ±15kV ESD protection, ensuring durability in harsh conditions.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
- Wide Temperature Range: Operates efficiently between -40°C and +125°C.
- Fast Data Rates: Supports speeds up to 50Mbps for high-performance communication.
- Reliable Communication: Ensures stable data transmission in noisy environments with its robust semiconductor component.
Applications
The THVD1450DRBR is commonly used in industrial machinery, such as conveyor systems, material handling equipment, and agricultural machinery, where reliable communication and high ESD protection are essential.
Where to Use:
- Industrial communication networks
- Automotive communication systems
- Building automation systems
- Battery-powered devices
- EMI-sensitive applications
Manufacturer
The THVD1450DRBR is manufactured by Panasonic Electronic Components, a global leader in semiconductor technology.
Packages
The THVD1450DRBR comes in a TO-220 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the component into electronic circuits.
Equivalent Parts of THVD1450DRBR
- STP16NF06: A comparable N-Channel IGBT from STMicroelectronics with similar features and performance.
- FN6506: An alternative N-Channel IGBT from Fairchild Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Obsolete | Part Package Code | TO-220AB |
| Pin Count ! | 3 | ECCN Code | EAR99 |
| Case Connection | ISOLATED | Collector Current-Max (IC) | 40 A |
| Collector-Emitter Voltage-Max | 410 V | Configuration | SINGLE |
| Gate-Emitter Thr Voltage-Max | 5.5 V | Gate-Emitter Voltage-Max | 30 V |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 40 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Finish | TIN SILVER BISMUTH COPPER |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 390 ns | Turn-on Time-Nom (ton) | 486 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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