2N7269

Name: 2N7269
Brand: International Rectifier
Rating: 4.5 (10 reviews)
Author: Lisleapex

Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

7,211 Effective Inventory

2N7269

Effective Inventory7,211

Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

Manufacturer Part # : 2N7269
Package/Case: TO3P
Brand: International Rectifier
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2N7269 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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2N7269 Description

The 2N7269 is a Power Field-Effect Transistor from International Rectifier, designed for high-performance applications that require low voltage and high current. This device features a high power density, making it suitable for use in industrial control systems, motor drives, and other demanding environments.

Features

High Current Capability: Handles up to 26A of drain current.
Low Voltage Operation: Designed for use in systems with low voltage requirements.
High Power Density: Offers high power density, making it suitable for compact designs.
Fast Switching Speed: Enables fast switching speeds, ideal for high-frequency applications.

Applications

The 2N7269 is commonly used in industrial control systems, motor drives, and other demanding environments where high current and low voltage are required.

Where to Use:

Industrial control systems
Motor drives
Aerospace applications
Railway systems
Automotive applications

Manufacturer

The 2N7269 is manufactured by International Rectifier, a leading provider of power semiconductors.

Packages

The 2N7269 comes in an TO-254AA package, making it suitable for use in compact designs.

Equivalent Parts of 2N7269

STP16NF06: A comparable N-Channel Power MOSFET from STMicroelectronics with similar features and performance.
FQP6N60C: An alternative N-Channel Power MOSFET from Fairchild Semiconductor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code !	8541.29.00.95	Additional Feature !	RADIATION HARDENED
Avalanche Energy Rating (Eas)	500 mJ	Case Connection	ISOLATED
Configuration	SINGLE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (Abs) (ID)	26 A	Drain Current-Max (ID)	26 A
Drain-source On Resistance-Max	0.1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-254AA	JESD-30 Code	S-MSFM-P3
JESD-609 Code	e0	Number of Elements	1
Number of Terminals	3	Operating Mode !	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Package Body Material	METAL
Package Shape	SQUARE	Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	150 W
Power Dissipation-Max (Abs)	150 W	Pulsed Drain Current-Max (IDM)	104 A
Qualification Status !	Not Qualified	Surface Mount !	NO
Terminal Finish	TIN LEAD	Terminal Form !	PIN/PEG
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	280 ns
Turn-on Time-Max (ton)	173 ns

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N7269 PDF Download