2N6306

Name: 2N6306
Brand: Microchip Technology
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Product 2N6306: NPN General Purpose Bipolar Junction Transistor

5,170 Effective Inventory

2N6306

Effective Inventory5,170

Product 2N6306: NPN General Purpose Bipolar Junction Transistor

Manufacturer Part # : 2N6306
Package/Case: TO-3
Part Status : Active
Brand: Microchip Technology
Product Categories : Single Bipolar Transistors

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2N6306 DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$173.422	$173.42
200	$69.197	$13,839.40
500	$66.885	$33,442.50
1000	$65.743	$65,743.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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2N6306 Details

The 2N6306 is a PNP power transistor designed for high-power switching applications. This transistor is capable of handling significant currents and voltages, making it suitable for power amplification and control in various electronic circuits. With its robust construction and reliable performance, the 2N6306 is essential for power electronics projects.

Pinout

1 (Emitter): Emitter Terminal
2 (Base): Base Terminal
3 (Collector): Collector Terminal

(Tip: For detailed pinout information, please refer to the corresponding datasheet.)

Key Features

High Power Handling: Capable of handling high currents and voltages for power applications.
PNP Transistor: Designed as a PNP type transistor for specific circuit requirements.
Robust Construction: Built with durable materials for reliable performance in demanding conditions.
Power Amplification: Suitable for power amplification and switching applications.
Wide Operating Range: Operates effectively across a wide range of voltages and temperatures.

Application

Power Switching: Ideal for high-power switching applications in electronic circuits.
Power Amplification: Used for amplifying power signals in audio and RF circuits.
Voltage Regulation: Suitable for voltage regulation and control circuits.

Where to Use

The 2N6306 is commonly used in power electronics projects that require high-power handling capabilities. It is essential for applications involving power switching, amplification, and voltage regulation.

How to Use

When using the 2N6306 in your circuit, ensure proper connections of the Emitter, Base, and Collector terminals according to your circuit requirements. Consider the power ratings and voltage limits to prevent damage to the transistor. Refer to the datasheet for detailed usage guidelines.

Application Circuit

The application circuit diagram for the 2N6306 illustrates how to incorporate the transistor into a power switching or amplification circuit. It shows the connections for power input, output, and control signals to enable proper operation.

(Tip: For detailed circuit diagram connections and usage guide, refer to the datasheet.)

Equivalents

2N6109: A similar PNP power transistor with comparable specifications.
MJ2955: An alternative power transistor offering similar power handling capabilities.

Complementary

The 2N6306 can be complemented by the 2N6307, which provides enhanced power handling capacity and performance characteristics. When pairing transistors, ensure compatibility with your circuit requirements for optimal functionality.

Frequently Asked Questions

Q: What is the maximum power handling of the 2N6306?

A: The 2N6306 is capable of handling power levels up to a specified limit. Consult the datasheet for exact power ratings and operating conditions.

Q: Is the 2N6306 suitable for high-frequency applications?

A: While primarily designed for power applications, the 2N6306's frequency response may have limitations. Verify the transistor's performance at the frequencies relevant to your application.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	Microchip	Product Category !	Bipolar Transistors - BJT
RoHS	N	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	250 V	Collector- Base Voltage VCBO	500 V
Emitter- Base Voltage VEBO	8 V	Collector-Emitter Saturation Voltage	5 V
Maximum DC Collector Current	8 A	Pd - Power Dissipation	125 W
Gain Bandwidth Product fT	-	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature !	+ 200 C	Brand	Microchip Technology
Product Type !	BJTs - Bipolar Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Technology	Si

FAQs

What is 2N6306?

The 2N6306 is a silicon PNP power transistor designed for high-voltage, high-speed power switching applications. It is commonly used in power supplies, industrial equipment, and electronic control systems.

How Does 2N6306 Work?

The 2N6306 works by amplifying and switching electrical signals in high-power applications. As a PNP transistor, it allows current to flow from the emitter to the collector when a small current flows into the base terminal, enabling control of larger currents and voltages in the connected circuit.

How Many Pins does 2N6306 have and What are the Functions of the Pinout Configuration?

The 2N6306 is housed in a TO-220 package and typically has three pins:

Emitter (E): The terminal through which current flows out of the transistor.
Base (B): The terminal that controls the flow of current between the emitter and the collector.
Collector (C): The terminal through which current flows into the transistor.

What are the Pros and Cons of 2N6306?

Pros:

High Voltage Rating: Designed for high-voltage applications.
High Speed: Capable of fast switching, suitable for high-speed power control.
Robustness: Can handle relatively high power levels, making it suitable for power electronics.

Cons:

Heat Dissipation: May require additional heat sinking for high-power applications to manage heat dissipation.
Drive Requirements: Being a power transistor, it may require a significant base current to switch at higher power levels.