2N4402

Effective Inventory9,441

Bipolar Transistors - BJT in PNP Configuration, TO-92 Package, Rated for 40V Voltage and 625mW Power Dissipation, with a Gain of 50@150mA at 2V 600mA

  • Manufacturer Part # : 2N4402

  • Package/Case: TO-92-3

  • Part Status : Obsolete

  • Brand: Onsemi

  • Product Categories : Single Bipolar Transistors

  • RoHS:

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2N4402 DataSheet

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2N4402 Details

The 2N4402 is a Bipolar Junction Transistor (BJT) that falls under the PNP category, designed for low-power applications in electronic circuits. It has a maximum voltage rating of 40V and can handle a continuous current up to 600mA. The transistor has a frequency capability of 150MHz, making it suitable for switching and amplification tasks in various electronic devices. The 2N4402 comes in a Through Hole TO-92 package, which is a standard in the industry and allows for easy mounting on a printed circuit board. It has three terminals - the emitter, base, and collector - each serving a specific function in controlling the flow of current through the transistor. With a power dissipation rating of 625mW, the 2N4402 is capable of handling moderate power levels without overheating. Its compact size and robust construction make it a versatile component for use in a wide range of electronic projects, including audio amplifiers, voltage regulators, and signal processing circuits.

Key Features

  • PNP Bipolar Junction Transistor
  • Low power, high gain transistor
  • Voltage Rating: -40V
  • Collector Current: -600mA
  • DC Current Gain: 40 to 250
  • TO-92 Package
  • Suitable for switching and amplifier applications

Application

  • Audio amplifiers
  • Sensor circuits
  • Switching circuits
  • Power drivers
  • Signal processing circuits
  • Voltage regulators
  • Oscillators
  • Motor controllers
  • LED drivers
  • Inverter circuits

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category ! Bipolar Transistors - BJT
RoHS N Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 40 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 750 mV Maximum DC Collector Current 600 mA
Pd - Power Dissipation 625 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Brand onsemi / Fairchild
Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min 30 at 1 mA, 1 V, 50 at 10 mA, 1 V, 50 at 150 mA, 2 V, 20 at 500 mA, 2 V
DC Current Gain hFE Max 150 Height 5.33 mm
Length 5.2 mm Product Type ! BJTs - Bipolar Transistors
Subcategory Transistors Technology Si
Width 4.19 mm Unit Weight 0.007090 oz

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