2N3879

Name: 2N3879
Brand: Microsemi Corporation
Rating: 4.5 (10 reviews)
Author: Lisleapex

NPN Bipolar Junction Transistor, TO-66

7,035 Effective Inventory

2N3879

Effective Inventory7,035

NPN Bipolar Junction Transistor, TO-66

Manufacturer Part # : 2N3879
Package/Case: CAN2
Part Status : Active
Brand: Microsemi Corporation
Product Categories : Single Bipolar Transistors

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2N3879 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for 2N3879 or email to us: Email: [email protected], we will contact you in 12 hours.

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2N3879 Details

The 2N3879 is a silicon NPN power transistor designed for high power amplifier applications. It has a maximum collector current (IC) rating of 30A and a maximum collector-emitter voltage (VCEO) of 150V. The transistor is housed in a TO-3 metal package, which helps with heat dissipation and provides reliable operation at high power levels.The 2N3879 has a low saturation voltage, which means it can operate efficiently even at high current levels. This makes it suitable for use in power amplifier circuits, high current switching applications, and motor control systems where high power handling capability is required.The transistor has a transition frequency (ft) of 4 MHz, which is a measure of its high-frequency performance. This makes it suitable for use in RF amplification circuits as well as audio amplifier applications.

Key Features

High frequency silicon NPN transistor
Designed for RF amplifier and oscillator applications
Low noise figure and high power gain
Can handle up to 30 watts of power
Operates up to 12.5 GHz frequency range
TO-39 metal package for easy mounting

Application

Radio frequency amplification
High-frequency applications
Signal processing
RF transmitters and receivers
Wireless communication systems
Amateur radio equipment
Satellite communication systems
Radar systems
Microwave systems
Mobile communication devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	Microsemi	Product Category !	RF Transistors (BJT)
Product-Category	Bipolar Transistors - BJT	RoHS	N
Mounting Style	Through Hole	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	75 V
Collector- Base Voltage VCBO	120 V	Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	1.2 V	Maximum DC Collector Current	7 A
Pd - Power Dissipation	35 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature !	+ 200 C
Brand	Microchip Technology	Product Type !	BJTs - Bipolar Transistors
Factory Pack Quantity	1	Subcategory	Transistors
Technology	Si	Unit Weight	0.634459 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N3879 PDF Download