2N3859A

Name: 2N3859A
Brand: Onsemi
Availability: InStock
Rating: 4.5 (10 reviews)
Author: Lisleapex

Product 2N3859A is a NPN general-purpose bipolar junction transistor (BJT) with a maximum voltage rating of 60V and a current rating of 0

6,853 Effective Inventory

2N3859A

Effective Inventory6,853

Product 2N3859A is a NPN general-purpose bipolar junction transistor (BJT) with a maximum voltage rating of 60V and a current rating of 0

Manufacturer Part # : 2N3859A
Package/Case: TO-92
Part Status : Obsolete
Brand: Onsemi
Product Categories : Single Bipolar Transistors

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Initiate the application within 90 days from the shipment date.

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2N3859A DataSheet

Pricing (USD)

Quantity	Unit Price	Ext. Price
1	$2.574	$2.57
200	$0.996	$199.20
500	$0.962	$481.00
1000	$0.944	$944.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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2N3859A Details

The 2N3859A is a silicon NPN transistor designed for general-purpose amplifier and switching applications. It has a maximum voltage rating of 60 volts and a continuous collector current rating of 0.5 amps. The transistor comes in a TO-92-3 package, which is a small plastic case with three leads for easy mounting on a circuit board. The 2N3859A is known for its high current gain, low noise, and low power consumption, making it suitable for use in a wide range of electronic circuits. Its small size and versatile characteristics make it a popular choice for hobbyists and professionals alike. When designing a circuit with the 2N3859A, it is important to consider its maximum ratings and operating conditions to ensure reliable performance. The transistor should be biased properly to operate within its specified parameters and to prevent damage from excessive current or voltage.

Key Features

High power gain
Low noise figure
Low input and output capacitance
High transition frequency
Low intermodulation distortion
Emitter ballasting resistors for high stability
Available in TO-18 metal can package

Application

RF amplifier circuits
Microwave applications
Radio frequency transmitters and receivers
Mobile communication systems
Satellite communication systems
Radar systems
Sonar systems
Medical imaging equipment
Industrial electronics
General purpose high-frequency applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	ON Semiconductor	Product Category !	Transistors (BJT) - Single
Categories	Transistors - Bipolar (BJT) - Single	Series	-
Packaging !	Bulk	Part-Status	500mA
Transistor-Type	500nA (ICBO)	Current-Collector-Ic-Max	100 @ 1mA, 1V
Voltage-Collector-Emitter-Breakdown-Max	625mW	Vce-Saturation-Max-Ib-Ic	Through Hole
Current-Collector-Cutoff-Max	TO-226-3, TO-92-3 (TO-226AA)	RoHS	Details
Mounting Style	Through Hole	Package / Case	TO-92-3
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	60 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	6 V	Maximum DC Collector Current	500 mA
Pd - Power Dissipation	625 mW	Gain Bandwidth Product fT	250 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature !	+ 150 C
Brand	onsemi / Fairchild	Continuous Collector Current	500 mA
DC Current Gain hFE Max	200	Height	5.33 mm
Length	5.2 mm	Product Type !	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	Subcategory	Transistors
Technology	Si	Width	4.19 mm
Unit Weight	0.008466 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N3859A PDF Download