2N3859A

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Product 2N3859A is a NPN general-purpose bipolar junction transistor (BJT) with a maximum voltage rating of 60V and a current rating of 0

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2N3859A DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $2.574 $2.57
200 $0.996 $199.20
500 $0.962 $481.00
1000 $0.944 $944.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

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Please submit RFQ for 2N3859A or email to us: Email: [email protected], we will contact you in 12 hours.

2N3859A Description

The 2N3859A is a high-performance Bipolar Junction Transistor (BJT) from ON Semiconductor, designed for reliable operation in various applications. This device features high power gain, low noise figure, and low input and output capacitance, making it suitable for demanding RF amplifier circuits.

Pin Details

The 2N3859A is a single bipolar transistor with a TO-92-3 package, featuring pins for emitter, base, and collector connections. It includes pins for power supply and ground connections as well.

Pin configuration

  • (Emitter): Emitter pin
  • (Base): Base pin
  • (Collector): Collector pin
  • (VCC): Positive Power Supply
  • (GND): Ground

Features

  • High Power Gain: Offers high power gain for reliable operation in demanding applications.
  • Low Noise Figure: Provides low noise figure for minimal interference and distortion.
  • Low Input and Output Capacitance: Features low input and output capacitance for improved frequency response.
  • High Transition Frequency: Offers high transition frequency for reliable operation in high-frequency applications.
  • Low Intermodulation Distortion: Provides low intermodulation distortion for minimal signal degradation.
  • Emitter Ballasting Resistors: Includes emitter ballasting resistors for high stability and reliability.

Applications

The 2N3859A is commonly used in various applications, including RF amplifier circuits, microwave applications, radio frequency transmitters and receivers, mobile communication systems, satellite communication systems, radar systems, sonar systems, medical imaging equipment, and industrial electronics.

Where to Use:

  • RF amplifier circuits
  • Microwave applications
  • Radio frequency transmitters and receivers
  • Mobile communication systems
  • Satellite communication systems
  • Radar systems
  • Sonar systems
  • Medical imaging equipment
  • Industrial electronics

Manufacturer

The 2N3859A is manufactured by ON Semiconductor, a leading provider of semiconductor components and solutions.

Packages

The 2N3859A comes in a TO-92-3 package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer ON Semiconductor Product Category ! Transistors (BJT) - Single
Categories Transistors - Bipolar (BJT) - Single Series -
Packaging ! Bulk Part-Status 500mA
Transistor-Type 500nA (ICBO) Current-Collector-Ic-Max 100 @ 1mA, 1V
Voltage-Collector-Emitter-Breakdown-Max 625mW Vce-Saturation-Max-Ib-Ic Through Hole
Current-Collector-Cutoff-Max TO-226-3, TO-92-3 (TO-226AA) RoHS Details
Mounting Style Through Hole Package / Case TO-92-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 500 mA
Pd - Power Dissipation 625 mW Gain Bandwidth Product fT 250 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature ! + 150 C
Brand onsemi / Fairchild Continuous Collector Current 500 mA
DC Current Gain hFE Max 200 Height 5.33 mm
Length 5.2 mm Product Type ! BJTs - Bipolar Transistors
Factory Pack Quantity 2000 Subcategory Transistors
Technology Si Width 4.19 mm
Unit Weight 0.008466 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N3859A PDF Download

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