2N2907A
Bipolar/HBT Transistor 2N2907A for RF Small Signal Applications2N2907A
Bipolar/HBT Transistor 2N2907A for RF Small Signal Applications
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Manufacturer Part # : 2N2907A
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Package/Case: TO-18-3
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Brand: Microchip Technology
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Product Categories : Single Bipolar Transistors
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Series : 2N29
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Service & Packaging
Service & Packaging
About After Sales Service
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2N2907A DataSheet
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Interested Parts
2N2907A Description
The 2N2907A is a high-performance NPN power transistor from ON Semiconductor, designed for general-purpose amplification and switching applications. This device features low saturation voltage, high current and low voltage ratings, making it suitable for various industrial and consumer electronics applications.
Pin Details
The 2N2907A is a single bipolar transistor with three pins: Base (B), Collector (C), and Emitter (E). The pin configuration is as follows:
- B: Base Pin
- C: Collector Pin
- E: Emitter Pin
Features
- PNP Bipolar Junction Transistor: Designed for general-purpose amplification and switching applications.
- Low Power Dissipation: Optimized for low power consumption, ideal for battery-powered devices.
- High Current and Low Voltage Ratings: Suitable for various industrial and consumer electronics applications.
- Low Saturation Voltage: Reduces power loss and increases efficiency in amplification circuits.
- Good Linearity and Switching Characteristics: Ensures stable performance in a wide range of operating conditions.
Applications
The 2N2907A is commonly used in various applications, including oscillator circuits, frequency multipliers, relay control circuits, motor speed control, audio amplification, and switching circuits.
Where to Use:
- Industrial automation systems
- Consumer electronics devices
- Automotive applications
- Battery-powered devices
- EMI-sensitive applications
Manufacturer
The 2N2907A is manufactured by ON Semiconductor, a leading global semiconductor company. It falls under the category of power transistors, which are designed to facilitate efficient and reliable energy transfer in various electronic systems.
Packages
The 2N2907A comes in a TO-39 package, which is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of 2N2907A
- BC547: A comparable PNP power transistor from ON Semiconductor with similar features and performance.
- 2N3906: An alternative PNP power transistor from Fairchild Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-18-3 |
Transistor Polarity | PNP | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 60 V | Collector- Base Voltage VCBO | 60 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 500 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature ! | + 200 C |
Brand | Microchip Technology | Product Type ! | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Unit Weight | 0.050459 oz |
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Price details
Prices listed do not include VAT.
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