2N2907A

Effective Inventory2,580

Bipolar/HBT Transistor 2N2907A for RF Small Signal Applications

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Service & Packaging

Service & Packaging

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2N2907A DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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2N2907A Description

The 2N2907A is a high-performance NPN power transistor from ON Semiconductor, designed for general-purpose amplification and switching applications. This device features low saturation voltage, high current and low voltage ratings, making it suitable for various industrial and consumer electronics applications.

Pin Details

The 2N2907A is a single bipolar transistor with three pins: Base (B), Collector (C), and Emitter (E). The pin configuration is as follows:

  • B: Base Pin
  • C: Collector Pin
  • E: Emitter Pin

Features

  • PNP Bipolar Junction Transistor: Designed for general-purpose amplification and switching applications.
  • Low Power Dissipation: Optimized for low power consumption, ideal for battery-powered devices.
  • High Current and Low Voltage Ratings: Suitable for various industrial and consumer electronics applications.
  • Low Saturation Voltage: Reduces power loss and increases efficiency in amplification circuits.
  • Good Linearity and Switching Characteristics: Ensures stable performance in a wide range of operating conditions.

Applications

The 2N2907A is commonly used in various applications, including oscillator circuits, frequency multipliers, relay control circuits, motor speed control, audio amplification, and switching circuits.

Where to Use:

  • Industrial automation systems
  • Consumer electronics devices
  • Automotive applications
  • Battery-powered devices
  • EMI-sensitive applications

Manufacturer

The 2N2907A is manufactured by ON Semiconductor, a leading global semiconductor company. It falls under the category of power transistors, which are designed to facilitate efficient and reliable energy transfer in various electronic systems.

Packages

The 2N2907A comes in a TO-39 package, which is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of 2N2907A

  • BC547: A comparable PNP power transistor from ON Semiconductor with similar features and performance.
  • 2N3906: An alternative PNP power transistor from Fairchild Semiconductor that offers equivalent functionality.
2N2907A

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-18-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1.6 V
Maximum DC Collector Current 600 mA Pd - Power Dissipation 500 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature ! + 200 C
Brand Microchip Technology Product Type ! BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 0.050459 oz

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