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2N2160
2N2160 is a silicon NPN transistor for low-power amplifier applications.
2N2160
2N2160 is a silicon NPN transistor for low-power amplifier applications.
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Manufacturer Part # : 2N2160
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Package/Case: CAN
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2N2160 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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2N2160 Description
The 2N2160 is a silicon NPN transistor for low-power amplifier applications, designed to provide high gain and switching speed in various electronic systems.
Pin Details
The 2N2160 has a TO-39 package with the following pins:
- Pin 1 (Base): Base terminal for controlling the transistor's operation
- Pin 2 (Collector): Collector terminal that connects to the load circuit
- Pin 3 (Emitter): Emitter terminal that connects to the input signal source
- Pin 4 (VCC): Positive power supply connection
- Pin 5 (GND): Ground connection for the transistor's operation
Features
- High Gain: Provides a high gain of 40-240, making it suitable for amplifier applications
- Fast Switching Speed: Offers a switching speed of 2 µs, allowing for fast signal processing and amplification
- Low Power Consumption: Designed to operate with low power consumption, ideal for battery-powered devices or energy-efficient systems
- Robust Construction: Housed in a TO-39 package, providing a robust and reliable construction for various applications
Applications
The 2N2160 is commonly used in RF amplifiers, oscillators, mixers, sweep generators, satellite communication systems, frequency synthesizers, signal generators, radar systems, TV transmitters, and mobile radio systems.
Where to Use:
- Radar Systems: Suitable for use in radar systems that require high gain and fast switching speed
- Satellite Communication Systems: Designed for use in satellite communication systems where low power consumption is crucial
- Mobile Radio Systems: Can be used in mobile radio systems that require a reliable and robust amplifier
Manufacturer
The 2N2160 is manufactured by Fairchild Semiconductor, a leading semiconductor company known for its high-quality and reliable products.
Packages
The 2N2160 comes in a TO-39 package, which provides a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of 2N2160
- 2N2222: A comparable NPN transistor with similar features and performance
- BC547: An alternative NPN transistor that offers equivalent functionality
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Case Connection | ISOLATED | Configuration | SINGLE |
| Emitter Current-Max | 70 mA | Inter-base Voltage-Max | 35 V |
| Intrinsic Stand-off Ratio-Max | 0.8 | Intrinsic Stand-off Ratio-Min | 0.47 |
| JEDEC-95 Code | TO-5 | JESD-30 Code | O-MBCY-W3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -65 °C |
| Package Body Material | METAL | Package Shape | ROUND |
| Package Style | CYLINDRICAL | Peak Point Current-Max | 25 mA |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Power Dissipation-Max (Abs) | 0.45 W |
| Qualification Status ! | Not Qualified | Static Inter-base Res-Max | 12 kΩ |
| Static Inter-base Res-Min | 4 kΩ | Surface Mount ! | NO |
| Terminal Form ! | WIRE | Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Valley Point Current-Min | 8 mA |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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