2N2147

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The 2N2147 is a silicon NPN transistor designed for general purpose amplifier applications.

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2N2147 DataSheet

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2N2147 Description

The 2N2147 is a silicon NPN transistor designed for general purpose amplifier applications, featuring high gain and low noise figure.

Features

  • High gain silicon NPN transistor: Offers high amplification and low noise figure, making it suitable for various amplifier applications.
  • Low noise figure: Provides a low level of electromagnetic interference (EMI), ensuring stable operation in noisy environments.
  • Excellent thermal stability: Maintains its performance characteristics over a wide temperature range, making it suitable for use in various industrial and commercial applications.
  • High voltage and current ratings: Supports high voltage and current levels, allowing it to handle demanding amplifier applications.

Applications

The 2N2147 is commonly used in low noise amplifier applications where high gain and low noise figure are essential for reliable operation.

Where to Use:

  • Audio amplification systems
  • Oscillator circuits
  • Radar equipment
  • Signal amplification stages
  • Inductive loads
  • Radio frequency applications
  • Power control circuits
  • Transmitter circuits
  • Telecommunication systems

Manufacturer

The 2N2147 is manufactured by GPD Optoelectronics Corp, a leading provider of semiconductor components.

Packages

The 2N2147 comes in a TO-39 metal package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.

Equivalent Parts of 2N2147

  • 2N3904: A comparable NPN transistor with similar features and performance.
  • BC547: An alternative NPN transistor that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
ECCN Code EAR99 Collector Current-Max (IC) 5 A
Configuration Single DC Current Gain-Min (hFE) 100
JESD-609 Code e0 Operating Temperature-Max 100 °C
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 12 W
Surface Mount ! NO Terminal Finish Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT) 3 MHz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N2147 PDF Download

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