2N1307

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The 2N1307 transistor is designed for small-signal applications, boasting a PNP configuration and a maximum current rating of 300mA

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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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2N1307 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Rapid Quote

Please submit RFQ for 2N1307 or email to us: Email: [email protected], we will contact you in 12 hours.

2N1307 Description

The 2N1307 is a P-N-P Silicon Epitaxial Planar Transistor from Advanced Semiconductor Inc, designed for high gain and low noise applications. This transistor is ideal for use in audio amplifier circuits due to its high gain and low noise characteristics.

Features

  • P-N-P Silicon Epitaxial Planar Transistor: Offers high gain and low noise characteristics, making it suitable for audio amplifier circuits.
  • Low Noise Amplifier: Provides reliable performance in noisy environments.
  • High Gain, Low Noise: Enables efficient amplification with minimal distortion.
  • Reliability and Long Term Stability: Ensures consistent performance over time.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices.
  • Complementary to 2N4084: Designed to work in conjunction with the 2N4084 transistor.

Applications

The 2N1307 transistor is commonly used in audio amplifier circuits due to its high gain and low noise characteristics, as well as in mixer circuits, oscillator circuits, and low-power switching applications.

Where to Use:

  • Audio amplifier circuits
  • Mixer circuits
  • Oscillator circuits
  • Low-power switching applications
  • Signal processing equipment
  • Voltage regulators
  • Voltage amplifiers
  • Radiation frequency circuits
  • Pulse circuits
  • General purpose amplification tasks

Manufacturer

The 2N1307 is manufactured by Advanced Semiconductor Inc, a leading provider of semiconductor components.

This product was developed to meet the growing demand for high-performance transistors in various applications, including audio amplifier circuits and low-power switching applications.

Packages

The 2N1307 comes without a specified package. It is available as a bare die or in a variety of packages depending on the application.

2N1307

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code No Part Life Cycle Code Obsolete
Part Package Code TO-5 Pin Count ! 3
Reach Compliance Code not_compliant ECCN Code EAR99
Collector Current-Max (IC) 0.3 A Configuration SINGLE
DC Current Gain-Min (hFE) 60 JEDEC-95 Code TO-5
JESD-30 Code O-MBCY-W3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 85 °C
Package Body Material METAL Package Shape ROUND
Package Style CYLINDRICAL Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 0.15 W
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Form ! WIRE Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material GERMANIUM Transition Frequency-Nom (fT) 10 MHz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2N1307 PDF Download

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