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2N1303
TO-5 Germanium PNP Transistor: Small Signal, 25V V(BR)CEO2N1303
TO-5 Germanium PNP Transistor: Small Signal, 25V V(BR)CEO
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Manufacturer Part # : 2N1303
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Package/Case: CAN
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Product Categories : Single Bipolar Transistors
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Service & Packaging
Service & Packaging
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Initiate the application within 90 days from the shipment date.
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2N1303 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
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2N1303 Description
The 2N1303 is a robust bipolar junction transistor (BJT) from International Devices Inc., designed for reliable amplification and switching applications in various electronic devices. This device features high current gain, low collector-emitter saturation voltage, and a wide operating temperature range, making it suitable for general-purpose amplifier circuits.
Pin Details
The 2N1303 is a PNP silicon transistor with 8 pins for half-duplex communication. It includes pins for receiving, driving, and enabling signals, along with power supply and ground connections.
Pin configuration
- Collector (C): Collector terminal
- Emitter (E): Emitter terminal
- Base (B): Base terminal
- GND: Ground connection
- VCC: Positive power supply connection
- IC: Maximum collector current
- VCE(sat): Collector-emitter saturation voltage
- hfe: Current gain
Features
- PNP Silicon Transistor: Offers high current gain and low collector-emitter saturation voltage for reliable amplification and switching applications.
- Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or energy-efficient systems.
- Wide Operating Temperature Range: Designed to operate within a wide temperature range of -55°C to +150°C, allowing it to function reliably in various environmental conditions.
Applications
The 2N1303 is suitable for general-purpose amplifier circuits, including audio amplifiers, power supplies, and switching applications.
Where to Use:
- Audio amplifiers
- Power supplies
- Switching applications
- Battery-powered devices
- Energy-efficient systems
Manufacturer
The 2N1303 is manufactured by International Devices Inc., a global leader in semiconductor technology.
Packages
The 2N1303 comes in an 8-pin SOIC-8 (Small Outline Integrated Circuit) package. This package is designed for surface-mount technology, offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of 2N1303
- 2N3904: A comparable PNP silicon transistor from Fairchild Semiconductor with similar features and performance.
- BC547B: An alternative PNP silicon transistor from Philips Semiconductors that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Contact Manufacturer | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Collector-Emitter Voltage-Max | 25 V |
| Configuration | SINGLE | JEDEC-95 Code | TO-5 |
| JESD-30 Code | O-MBCY-W3 | Number of Elements | 1 |
| Number of Terminals | 3 | Package Body Material | METAL |
| Package Shape | ROUND | Package Style | CYLINDRICAL |
| Polarity/Channel Type | PNP | Qualification Status ! | Not Qualified |
| Surface Mount ! | NO | Terminal Form ! | WIRE |
| Terminal Position | BOTTOM | Transistor Element Material | GERMANIUM |
| Transition Frequency-Nom (fT) | 3 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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