2N1015
7.5A I(C) NPN Power Bipolar Transistor 2N10152N1015
7.5A I(C) NPN Power Bipolar Transistor 2N1015
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Manufacturer Part # : 2N1015
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Package/Case: CAN
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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2N1015 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Interested Parts
2N1015 Description
The 2N1015 is a P-N-P silicon epitaxial transistor, designed for high-performance applications in audio amplifier and switching circuits. This device features low power dissipation, high current gain, and high voltage capability, making it suitable for demanding electronic systems.
Pin Details
The 2N1015 is a TO-39 metal package transistor with the following pin configuration:
- Pin 1 (B): Base
- Pin 2 (C): Collector
- Pin 3 (E): Emitter
- Pin 4 (GND): Ground
- Pin 5 (VCC): Positive Power Supply
Features
- P-N-P Silicon Epitaxial Transistor: Offers high-performance characteristics for demanding applications.
- Low Power Dissipation: Optimized for low power consumption, ideal for battery-powered devices.
- High Current Gain: Provides high current gain for efficient amplifier designs.
- High Voltage Capability: Supports high voltage applications with its robust design.
Applications
The 2N1015 is commonly used in audio amplifiers, radio frequency amplifiers, and low power switching applications where high performance and reliability are essential.
Where to Use:
- Audio amplifiers
- Radio frequency amplifiers
- Low power switching applications
- Oscillators
- EMI-sensitive applications
Manufacturer
The 2N1015 is manufactured by Philips Semiconductors, a leading global provider of semiconductor solutions.
Packages
The 2N1015 comes in a TO-39 metal package, designed for surface-mount technology and offering a compact and efficient solution for integrating the transistor into electronic circuits.
Equivalent Parts of 2N1015
- BC107: A comparable P-N-P silicon epitaxial transistor from Philips Semiconductors with similar features and performance.
- 2N5089: An alternative P-N-P silicon epitaxial transistor from Fairchild Semiconductor that offers equivalent functionality.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Obsolete | ECCN Code | EAR99 |
Collector Current-Max (IC) | 7.5 A | Configuration | Single |
DC Current Gain-Min (hFE) | 10 | Operating Temperature-Max | 150 °C |
Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 150 W |
Surface Mount ! | NO | Transition Frequency-Nom (fT) | 0.02 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
Prices listed do not include VAT.
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