2MBI75VA-120-50

Insulated Gate Bipolar Transistor
6,498 Effective Inventory

2MBI75VA-120-50

Effective Inventory6,498

Insulated Gate Bipolar Transistor

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2MBI75VA-120-50 DataSheet
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2MBI75VA-120-50 Description

The 2MBI75VA-120-50 is an IGBT module from Fuji Electric, designed for high-power applications in industrial and commercial settings. This device features a maximum current rating of 75A and a voltage rating of 1200V, making it suitable for demanding power conversion tasks.

Pin Details

The 2MBI75VA-120-50 is a dual-channel IGBT module with 7 pins for half-bridge configuration. It includes pins for gate drive, collector-emitter voltage, and emitter current measurement, as well as ground connections.

Pin configuration

  • P1 (GND): Ground
  • P2 (VCC): Positive Power Supply
  • P3 (EMITTER): Emitter
  • P4 (COLLECTOR): Collector
  • P5 (GATE): Gate Drive
  • P6 (GND): Ground
  • P7 (VCC): Positive Power Supply

Features

  • High Current Rating: Handles up to 75A of current, making it suitable for demanding power conversion applications.
  • High Voltage Rating: Operates at a maximum voltage of 1200V, ensuring reliable performance in high-voltage environments.
  • Low Loss Performance: Designed to minimize energy losses and maximize efficiency in power conversion tasks.

Applications

The 2MBI75VA-120-50 is commonly used in industrial and commercial applications that require high-power switching, such as motor drives, power supplies, and renewable energy systems.

Where to Use:

  • Industrial automation systems
  • Commercial power supply systems
  • Renewable energy systems (solar, wind, etc.)
  • Motor drives and control systems

Manufacturer

The 2MBI75VA-120-50 is manufactured by Fuji Electric, a leading global provider of power electronics solutions.

Packages

The 2MBI75VA-120-50 comes in a compact package designed for surface-mount technology (SMT), making it easy to integrate into electronic circuits.

Equivalent Parts of 2MBI75VA-120-50

  • Fuji Electric's equivalent part: The 2MBI75VA-120-50 is a direct replacement for other Fuji Electric IGBT modules with similar specifications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Active ECCN Code EAR99
Case Connection ISOLATED Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7 Number of Elements 2
Number of Terminals 7 Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Surface Mount ! NO
Terminal Form ! UNSPECIFIED Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 600 ns VCEsat-Max 2.4 V

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2MBI75VA-120-50 PDF Download

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