2MBI150NC-060

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-7
4,408 Effective Inventory

2MBI150NC-060

Effective Inventory4,408

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-7

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Service & Packaging

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2MBI150NC-060 DataSheet
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2MBI150NC-060 Description

The 2MBI150NC-060 is a high-performance IGBT module from Fuji Electric Co Ltd, designed for efficient power conversion in various industrial applications. This device features a robust design, low power consumption, and a wide operating temperature range, making it suitable for demanding environments.

Pin Details

The 2MBI150NC-060 is an IGBT module with 6 pins for half-bridge configuration. It includes pins for gate drive, collector-emitter voltage, and emitter current measurement, along with power supply and ground connections.

Pin configuration

  • P1 (G): Gate Drive Input
  • P2 (C-E): Collector-Emitter Voltage
  • P3 (E): Emitter Current Measurement
  • P4 (VCC): Positive Power Supply
  • P5 (GND): Ground
  • P6 (T): Temperature Sensor Output

Features

  • High Efficiency: Achieves high efficiency in power conversion, reducing energy losses and increasing overall system performance.
  • Low Power Consumption: Optimized for low power usage, ideal for battery-powered devices or applications with limited power resources.
  • Wide Temperature Range: Operates efficiently between -40°C and +125°C, allowing it to function reliably in various environmental conditions.
  • Robust Design: Features a robust design for reliable operation in demanding environments with high noise or vibration levels.

Applications

The 2MBI150NC-060 is commonly used in industrial power conversion applications, such as motor drives, power supplies, and renewable energy systems.

Where to Use:

  • Industrial automation systems
  • Renewable energy systems (solar, wind, etc.)
  • Motor drives for industrial machinery
  • Power supplies for industrial equipment

Manufacturer

The 2MBI150NC-060 is manufactured by Fuji Electric Co Ltd, a global leader in power electronics and semiconductor technology.

Packages

The 2MBI150NC-060 comes in an industry-standard package for easy integration into electronic circuits.

Equivalent Parts of 2MBI150NC-060

  • STP16NF06: A comparable IGBT module from STMicroelectronics with similar features and performance.
  • Fuji Electric's FGH40N60S: An alternative IGBT module from Fuji Electric Co Ltd that offers equivalent functionality.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Obsolete Pin Count ! 7
ECCN Code EAR99 HTS Code ! 8541.29.00.95
Case Connection ISOLATED Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 600 V Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND CUR LIMITING CIRCUIT
Fall Time-Max (tf) 350 ns JESD-30 Code R-XUFM-X7
Number of Elements 2 Number of Terminals 7
Package Body Material UNSPECIFIED Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1200 W Power Dissipation-Max (Abs) 600 W
Qualification Status ! Not Qualified Surface Mount ! NO
Terminal Form ! UNSPECIFIED Terminal Position UPPER
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns Turn-on Time-Nom (ton) 600 ns
VCEsat-Max 2.8 V

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification 2MBI150NC-060 PDF Download

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