1MBH75D-060S
TO-3PL Packaged Insulated Gate Bipolar Transistor capable of handling 83A Collector Current and 600V Breakdown Voltage, N-Channel, 3 Pins1MBH75D-060S
TO-3PL Packaged Insulated Gate Bipolar Transistor capable of handling 83A Collector Current and 600V Breakdown Voltage, N-Channel, 3 Pins
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Manufacturer Part # : 1MBH75D-060S
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Package/Case: TO-3PL
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Brand: Fujitsu Limited
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Product Categories : Single IGBTs
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1MBH75D-060S DataSheet

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Interested Parts
1MBH75D-060S Description
The 1MBH75D-060S is an insulated gate bipolar transistor (IGBT) from Fuji Electric Co., Ltd., designed for high-reliability applications in the discrete semiconductors category. This device features a high current capacity of up to 83A and a low voltage rating of 600V, making it suitable for power electronic designs.
Pin Details
The 1MBH75D-060S is a N-channel IGBT with a TO-3PL package configuration. It has three pins: Collector (C), Base (B), and Emitter (E).
Pin configuration
- C (Collector): Collector pin for electrical connections.
- B (Base): Base pin used to control the transistor.
- E (Emitter): Emitter pin, also used as a ground reference.
Features
- High Current Capability: Handles current up to 83A for enhanced performance in power electronics applications.
- Low Voltage Rating: Designed to operate within a voltage range of 600V V(BR)CES for reliable switching.
Applications
The 1MBH75D-060S is commonly used in power electronic applications where high current handling and low voltage ratings are essential, such as in motor control systems or DC-DC converters.
Where to Use:
- Motor control systems
- DC-DC converters
- Power Supplies
- Industrial automation
Manufacturer
The 1MBH75D-060S is manufactured by Fuji Electric Co., Ltd., a leading global supplier of power electronics and electrical components.
Packages
The 1MBH75D-060S is available in a TO-3PL package, making it suitable for use in a variety of industrial and commercial applications.
FAQ
Q: What is the maximum current rating of the 1MBH75D-060S?
A: The device can handle up to 83A for reliable operation in power electronic designs.

Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Part Life Cycle Code | Obsolete | Part Package Code | TO-3PL |
Pin Count ! | 2 | ECCN Code | EAR99 |
Collector Current-Max (IC) | 83 A | Collector-Emitter Voltage-Max | 600 V |
Configuration | SINGLE WITH BUILT-IN DIODE | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Qualification Status ! | Not Qualified |
Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 600 ns | Turn-on Time-Nom (ton) | 270 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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Price details
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