TSOP66 Related Product

Part Number Description Brand Lifecycle Status Cargo cycle In Stock Operation
K4H561638N-LCCC The K4H561638N-LCCC is a dynamic random-access memory (DRAM) chip commonly used in electronic devices for data storage and retrieval Samsung Electro-Mechanics 3~7 Days 3,297
HY5DU121622CTP-J -66, 0.65 PITCH SK Hynix 3~7 Days 5,130
HY5DU121622CTP-D43 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 PITCH, ROHS COMPLIANT, TSOP2-66 SK Hynix 3~7 Days 6,432
HY5DU281622ET-J DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix 3~7 Days 5,212
HY5DU121622DTP-J With a pitch of 0.65mm and ROHS compliance, this TSOP2-66 memory chip is ideal for environmentally-conscious projects SK Hynix 3~7 Days 6,593
H5DU5162ETR-E3C Strictly for authorized manufacturers and contractors SK Hynix 3~7 Days 6,611
MT46V16M16P-5B:K DDR DRAM 16MX16 0.7ns CMOS PDSO66 0.40 INCH LEAD FREE PLASTIC TSOP-66 Micron 3~7 Days 6,588
K4H511638J-LCB3 Ddr Dram, 32MX16, 0.7NS, Cmos, PDSO66 Samsung Electro-Mechanics 3~7 Days 7,343
W9412G6JH-5 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics 3~7 Days 7,909
HY5DU561622FTP-4 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix 3~7 Days 6,205
HY5DU561622ETP-4 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 SK Hynix 3~7 Days 3,935
H5DU5182ETR-E3C DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix 3~7 Days 6,127
H5DU1262GTR-E3C DDR DRAM with 8MX16 capacity and 0.7ns speed SK Hynix 3~7 Days 7,585
H5DU2562GTR-E3C DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 SKHYNIX 3~7 Days 5,483
K4D261638E-TC40 DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, TSOP2-66 Samsung Electro-Mechanics 3~7 Days 7,007
HY5DU56822DT-D43 DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix 3~7 Days 3,617
HY5DU56822BT-D43 32MX8 DDR DRAM with 0.7ns access speed SK Hynix 3~7 Days 3,317
MT46V64M8P-5B DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron 3~7 Days 6,214
W9425G6JH-5 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics 3~7 Days 3,083
W9425G6JH-4 DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Macronix 3~7 Days 4,661
MT46V16M16P-5B DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron 3~7 Days 4,342
M13S2561616A-5TG A high-performance DRAM module for advanced memory needs: 'M13S25616A-5TG Elite Semiconductor Memory Technology Inc 3~7 Days 7,947
NT5DS32M16ES-5T NT5DS32M16ES-5T is a DDR1 memory module with a capacity of 512Mb and a speed of 200MHz, featuring a 32Mx16 configuration in a TSOP66 package Nanya Technology OBSOLETE 3~7 Days 6,917
EM6AA160TSA-5G High-performance chip for data-intensive systems Etron Technology Inc 3~7 Days 7,791

Additional Package/Case

BGA-1152 132-WFQFN TFSOP-10 672-BGA SC-96 DFN-2020-6 SSOP40 SOP14 PG-TTFN-9 SOT-457-6 PowerTab-2 NFBGA-179 HTSOPJ8-8 TO-244 PDIP-8

Hot Package/Case

BGA-196 BGA-320 BGA-80 PGA-132 LGA-123 PLCC-44 QFP-144 QFN-68 DFN5060-8 SOP28W CSP-BGA SON8 SOJ-40 SOIC-8 MLP55-32 CBGA-360 PAK-5 DSOF-8