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TSOP-48 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| TC58DVM72A1FT00 | IC 16M X 8 EEPROM 3V, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, Programmable ROM | Toshiba | 3~7 Days | 5,651 | ||
| S29AL008D90TFI020 | S29AL008D90TFI020 is a flash memory chip manufactured by Cypress Semiconductor | Spansion | 3~7 Days | 5,365 | ||
| K9F1208U0C-PIB0 | Flash, 64MX8, 30ns, PDSO48, TSOP1-48 | Samsung Electro-Mechanics | 3~7 Days | 6,503 | ||
| K9K8G08U0A-PIB0 | Flash, 1GX8, 25ns, PDSO48 | Samsung Electro-Mechanics | 3~7 Days | 4,825 | ||
| K9WAG08U1B-PIB0 | The K9WAG08U1B-PIB0 chip is a NAND flash memory device manufactured by Samsung | Samsung Electro-Mechanics | 3~7 Days | 6,697 | ||
| K9F1G08U0A-PCB0 | NAND Flash Memory 128M x 8 | Samsung Electro-Mechanics | 3~7 Days | 4,712 | ||
| K9F5608U0D-PCB0 | Flash, 32MX8, 30ns, PDSO48, | Samsung Electro-Mechanics | 3~7 Days | 5,307 | ||
| K9F2G08U0A-PCB0 | 48-pin plastic dual in-line package, 20ns access time | Samsung Electro-Mechanics | 3~7 Days | 3,881 | ||
| K9KAG08U0M-PCB0 | The K9KAG08U0M-PCB0 is a NAND flash memory chip commonly used in electronic devices for data storage | Samsung Electro-Mechanics | 3~7 Days | 7,215 | ||
| HY27UF081G2A-TPCB | HY27UF081G2A-TPCB is a NAND Flash memory chip | SK Hynix | 3~7 Days | 6,409 | ||
| HY27UF084G2M-TPCB | Flash, 512MX8, 25ns, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, TSOP1-48 | SK Hynix | 3~7 Days | 4,676 | ||
| AM29LV065DU90REI | Flash, 8MX8, 90ns, PDSO48, MO-142DD, TSOP-48 | AMD | 3~7 Days | 3,001 | ||
| MT29F64G08AJABAWP-IT B | NAND Flash SLC 64G 8GX8 TSOP QDP | Micron | 3~7 Days | 3,306 | ||
| MBM29F800TA-70PFTN | IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,TSSOP,48PIN,PLASTIC | Fujitsu Limited | 3~7 Days | 7,915 | ||
| MBM29F016A-90PFTN | Memory chip with 2 megabits of storage capacity in an eight-bit configuration | Fujitsu Limited | 3~7 Days | 4,068 | ||
| AM29F800BT-55EF | The AM29F800BT-55EF is a high-performance NOR Flash memory device featuring a parallel interface, operating at 5V | AMD | 3~7 Days | 6,560 | ||
| AT49BV163D-70TU | Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48 | Microchip Technology | Discontinued | 3~7 Days | 3,039 | |
| AT49BV320D-70TU | Bottom boot NOR Flash chip with a 32M memory capacity and 2.7V voltage compatibility | Microchip Technology | 3~7 Days | 4,690 | ||
| AT49BV322DT-70TU | Experience seamless data transfer and programming with this versatile and compact flash memory module." | Microchip Technology | Discontinued | 3~7 Days | 5,385 | |
| M29W160ET70N6E | TSOPI-48 NOR FLASH ROHS, M29W160ET70N6E, is a non-volatile memory product suitable for a wide range of digital applications | Micron | 3~7 Days | 5,962 | ||
| M29W320DB70N6E | 0ns TSOP-48 flash memory | Micron | 3~7 Days | 7,018 | ||
| MT29F4G08AACWC:C | IC FLASH 4GBIT PARALLEL 48TSOP I | Micron | 3~7 Days | 6,217 | ||
| S29GL064N90TFI060 | Cypress Semiconductor flash memory | Cypress Semiconductor Corp | Obsolete | 3~7 Days | 4,345 | |
| S29JL064H90TFI000 | NOR Flash memory with a capacity of 4M x 16 | Spansion | 3~7 Days | 7,111 | ||
| S29JL064J70TFI000 | 64Mbit, 70ns, 2.7-3.6V | Cypress Semiconductor Corp | 3~7 Days | 3,692 | ||
| S34ML08G101TFI000 | Parallel interface for high speed data transfer" | Cypress Semiconductor Corp | Active | 3~7 Days | 3,005 | |
| TC58NVG2S0FTA00 | 4G-bit NAND Flash | Toshiba | Active | 3~7 Days | 7,556 | |
| S29AL032D90TFI040 | High-speed operation at 90 nanoseconds | Spansion | 3~7 Days | 7,739 | ||
| S29JL064H70TFI000 | High-performance 64Mbit flash memory module suitable for applications requiring quick data access | Spansion | 3~7 Days | 6,135 | ||
| K9F1G08U0C-PIB0 | Time-Proven Processor Architecture: The 128MX8 processor boasts a strong track record of reliability | Samsung Electro-Mechanics | 3~7 Days | 5,985 | ||
| AM29F160DT-75EF | 16Mb NOR Flash memory | Cypress Semiconductor Corp | 3~7 Days | 3,105 | ||
| TC58NVG2S3ETA00 | Storage solution operating at a voltage of 3.3V | Toshiba | 3~7 Days | 5,742 | ||
| S29AL032D70TFI040 | 2MB Parallel NOR Flash 3V 70ns | Spansion | 3~7 Days | 6,081 | ||
| HY27US08281A-TPCB | 28Mbit Parallel NAND Hynix HY27US08281A-TPCB | SK Hynix | Discontinued | 3~7 Days | 5,392 | |
| S29AL016D70TFI010 | High-speed performance and reliability for data storage and retrieval needs | Spansion | 3~7 Days | 3,070 | ||
| S29AL008J70TFI01 | 0 nanosecond access time | Spansion | 3~7 Days | 6,316 | ||
| S29AL032D90TFI04 | S29AL032D90TFI04 is a flash memory chip manufactured by Cypress Semiconductor | Spansion | 3~7 Days | 6,439 | ||
| S29AL008D70TFI01 | S29AL008D70TFI01 is a flash memory chip by Cypress Semiconductor | Spansion | 3~7 Days | 5,028 | ||
| H27U2G8F2DTR-BC | The H27U2G8F2DTR-BC is a NAND flash memory chip designed for use in electronic devices | SKHYNIX | 3~7 Days | 5,009 | ||
| MT29F32G08ABAAAWP | The MT29F32G08ABAAAWP is a NAND flash memory chip manufactured by Micron Technology | Micron | 3~7 Days | 6,268 |
Additional Package/Case