TO-92 Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
BSN10A | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Philips | 3~7 Days | 4,575 | ||
2N2923 | Description of product 2N2923: Small Signal Bipolar Transistor, with a maximum collector current of 0 | Motorola Semiconductor Products | 3~7 Days | 3,141 | ||
2SA1993 | Elevate your audio game with the 2SA1993's robust performance | Mitsubishi Electric | 3~7 Days | 5,084 | ||
2SA1206 | Silicon 1-Element Bipolar Transistor | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 4,709 | ||
RN1001 | SC-43 3-Pin Bipolar Transistor, NPN, 100mA, 50V | Toshiba | 3~7 Days | 5,830 | ||
2SC2551 | 3 PIN 2SC2551 NPN Transistor 100 mA, 300 V | Toshiba | 3~7 Days | 6,388 | ||
2SA836 | 92 Package, 0.1A Collector Current | Renesas Electronics Corporation | 3~7 Days | 5,023 | ||
2N3414 | Can handle a maximum current of 500mA | KEC International | 3~7 Days | 7,319 | ||
2SA1015-GR | Product 2SA1015-GR | Toshiba | 3~7 Days | 6,564 | ||
2SC2003 | Overview of Bipolar Power Transistors 2SC2003 | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 5,820 | ||
2SC2240-BL | General Purpose NPN Silicon Bipolar Transistor, 100 mA, 120 V, TO-92 Package | Toshiba | OBSOLETE | 3~7 Days | 4,290 | |
DS2434 | Memory Circuit, 256X1, CMOS, PBCY3, TO-92, 3 PIN | Dallas Semiconductor | 3~7 Days | 5,448 | ||
P2N2222AG | Within the realm of Bipolar Transistors - BJT, the P2N2222AG variant stands out for its versatility and reliability in diverse electronic systems | Onsemi | 3~7 Days | 3,397 | ||
RN1002 | Bipolar transistors pre-biased in TO-92 package, phased out since July 2010 and declared obsolete by October 2007 | Toshiba | 3~7 Days | 7,866 | ||
2SK170-GR | Discontinued product no longer supported | Toshiba | OBSOLETE | 3~7 Days | 5,643 | |
2SC2240-GR | 2SC2240-GR NPN Silicon Transistor | Toshiba | 3~7 Days | 3,575 | ||
2SC1214 | 00mA, 50V, TO-92(1) | Renesas Electronics Corporation | 3~7 Days | 3,063 | ||
2SA1626 | 2000mA PNP transistor with a voltage rating of 400V | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 5,736 | ||
2SC2909 | Single-element transistor for amplification of weak electrical signals | Sanyo Denki | 3~7 Days | 7,625 | ||
2SA970GR | Small Signal Bipolar Transistor | Toshiba | 3~7 Days | 5,621 | ||
2SA954 | 0.3A I(C), 80V V(BR)CEO, 1-Element | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 4,384 | ||
2N4003 | 2N4003: PNP Bipolar Transistors - BJT capable of handling 100V Voltage, 100W Power, and 30A Current, TO-63 Package | Motorola Semiconductor Products | 3~7 Days | 6,730 | ||
2N7000KL | 2N7000KL is an N-channel enhancement mode MOSFET transistor used for switching and amplifying signals. | Vishay | 3~7 Days | 6,191 | ||
ST9014C | The ST9014C is a low power digital radio chip designed for smart home and IoT applications | STMicroelectronics NV | 3~7 Days | 4,737 | ||
PST518B | PST518B is a microcontroller chip designed for low-power, embedded applications | Mitsubishi Electric | 3~7 Days | 4,551 | ||
2SC2634 | Small Signal Bipolar Transistor, 0.1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, SC-43A, TO-92-B1, 3 PIN | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 149 | ||
2SC2721 | NEC Compound Semiconductor Devices Ltd | 3~7 Days | 4,986 | |||
2N3904G | 5.33mm Body Height | Onsemi | Obsolete | 3~7 Days | 5,265 | |
2N5462 | High-gain and low-noise P-channel JFET transistor for precise amplification | Onsemi | Obsolete | 3~7 Days | 5,326 | |
DS2502+ | One kilobyte memory capacity | Maxim Integrated | 3~7 Days | 5,304 | ||
BS107P | N-MOSFET Transistor | Diodes Incorporated | 3~7 Days | 7,004 | ||
LM335AZ | The LM335AZ is specifically engineered for seamless integration onto circuit boards | STMicroelectronics NV | 3~7 Days | 4,267 | ||
2SA1270 | 2SA1270 Bipolar Junction Transistor, PNP Type | KEC International | 3~7 Days | 4,186 | ||
LM337LZ-NOPB | Standard Regulator Neg -1.2V to -37V 0.1A 3-Pin TO-92 Bulk | NS Electronics Co Ltd | 3~7 Days | 3,862 | ||
KRA112M | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92M, 3 PIN | KEC International | 3~7 Days | 7,668 | ||
KN2907 | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | KEC International | 3~7 Days | 4,881 | ||
ED1402 | ED1402 | Philips | 3~7 Days | 7,149 | ||
BSS101 | The BSS101 is a Silicon-based N-Channel Small Signal Field-Effect Transistor (FET) capable of handling currents up to 0 | SIEMENS | 3~7 Days | 5,855 | ||
BSS135 | Field-effect transistor for small signal applications | Infineon Technologies | 3~7 Days | 5,686 | ||
BC639-16 | Transistor: NPN, bipolar, 80V, 1A, 0.8/2.75W, TO92 | Fairchild Semiconductor | 3~7 Days | 3,244 |
Additional Package/Case