TO-254AA Related Product
Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
---|---|---|---|---|---|---|
IRFM450 | Manufactured on a MIL-PRF-19500 production line | Infineon Technologies | NRND | 3~7 Days | 5,735 | |
IRFM460 | TO-254AA package | Infineon Technologies | OBSOLETE | 3~7 Days | 9,637 | |
HFB35HB20 | 5HB20 200V 35A Hi-Rel ultra-fast discrete diode standard packaging | International Rectifier | Active | 3~7 Days | 7,283 | |
1N6659 | TO-254 UFR, FRR End of Life Forecast: 2048-10-03 | Microchip Technology | Active | 3~7 Days | 7,062 | |
IRFM360 | Dependable Solution: IRFMprovides reliable switching in high-voltage system | Infineon Technologies | NRND | 3~7 Days | 8,019 | |
HFB35HB20C | TO-254AA 3-Pin Diode Switching 200V 35A | Infineon Technologies AG | OBSOLETE | 3~7 Days | 7,697 | |
HFA35HB60C | HFA35HB60C is a rectifier diode tailored for switching applications demanding a current handling capacity of up to 30A | Infineon Technologies AG | ACTIVE | 3~7 Days | 7,346 | |
IRFM150 | IRFM150 is a N-Channel MOSFET Transistor packaged in TO-254AA | Infineon Technologies | NRND | 3~7 Days | 7,136 | |
IRHM9260 | Power MOSFET, 27A Drain Current, 200V Voltage Rating, 0.16ohm On-Resistance, Single Channel, P-Type Silicon, TO-254AA Package | Infineon Technologies | NRND | 3~7 Days | 8,440 | |
IRF5M4905 | Power P-Channel MOSFET in TO-254AA Package with 55V Vds and 35A Id | Infineon Technologies | NRND | 3~7 Days | 6,615 | |
12CGQ150 | Silicon Schottky Rectifier Diode HERMETIC SEALED PACKAGE-3 | Infineon Technologies | NRND | 3~7 Days | 6,957 | |
IRFM064 | N-Channel MOSFET Transistor, TO-254AA | Infineon Technologies | NRND | 3~7 Days | 9,479 | |
IRFM054 | TO-254AA 3-Pin (3+Tab) Transistor | Infineon Technologies | NRND | 3~7 Days | 9,174 | |
IRHM9150 | TO-254AA packaged P-Channel MOSFET suitable for high voltage applications up to 100V | Infineon Technologies | NRND | 3~7 Days | 6,590 | |
IRF5M5210 | M5210 with Hermetic PackagingBenefits | Infineon Technologies | NRND | 3~7 Days | 7,421 | |
JANSR2N7425 | TO-254AA package | Infineon Technologies | NRND | 3~7 Days | 9,981 | |
JANSR2N7424 | Transistor MOSFET P-channel with a voltage rating of 60V and current capacity of 35A in a TO-254AA package | Infineon Technologies | NRND | 3~7 Days | 9,029 | |
IRFM9140 | TO-254AA Encapsulated IRFM9140 MOSFET for High-Reliability Applications | Infineon Technologies | NRND | 3~7 Days | 9,357 | |
IRFM350 | 400V Single N-Channel Hi-Rel MOSFET | Infineon Technologies | NRND | 3~7 Days | 6,889 | |
IRFM140 | Silicon-based power transistor in TO-254AA package | Infineon Technologies AG | ACTIVE | 3~7 Days | 9,430 | |
IRF5M3710 | N-Channel Silicon Transistor MOSFET 100V 35A 3-Pin TO-254AA | Infineon Technologies | NRND | 3~7 Days | 9,195 | |
HFA35HB60 | 600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package | Infineon Technologies AG | ACTIVE | 3~7 Days | 6,745 | |
35CGQ150 | 35CGQ150 Schottky diode 150V 35A | Infineon Technologies AG | ACTIVE | 3~7 Days | 6,317 | |
35CGQ100 | 35CGQ100 Rectifier Diode | Infineon Technologies | NRND | 3~7 Days | 8,691 | |
22GQ100 | Product 22GQ100 is a Schottky diode with a voltage rating of 100V and a current handling capability of 30A | Infineon Technologies AG | ACTIVE | 3~7 Days | 5,549 | |
IRHM9160 | IRHM9160 - Power MOSFET Transistor | Infineon Technologies | NRND | 3~7 Days | 9,848 | |
15CGQ100 | Exceptional processing power for demanding projec | Infineon Technologies AG | ACTIVE | 3~7 Days | 5,167 | |
JANTX2N7225 | N-Channel MOSFET with 200V Voltage Rating and 27.4A Current Rating | Infineon Technologies | OBSOLETE | 3~7 Days | 5,955 | |
IRFM260 | Packaged on a MIL-PRF-19500 manufacturing line | tt electronics | NRND | 3~7 Days | 5,222 | |
IRFM250 | MOSFET | Infineon Technologies | NRND | 3~7 Days | 8,203 | |
JANTX2N7228 | High-reliability JANTX2N7228: Engineered for demanding applications with 500V rating | Infineon Technologies | OBSOLETE | 3~7 Days | 9,581 |
Additional Package/Case