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SOT-227-4 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| ESM2030DV | Power transistor with NPN silicon technology, rated at 67A and 300V | STMicroelectronics NV | Obsolete | 3~7 Days | 1 | |
| APL502J | 500V MOSFET Discrete Semiconductor Modules FG, 0.12_OHM | Microsemi Corporation | Active | 3~7 Days | 7,809 | |
| IXTN110N20L2 | With a 200V voltage rating and 100A current capacity | IXYS Corporation | 3~7 Days | 4,759 | ||
| VS-UFB230FA60 | Siliconix / Vishay VS-UFB230FA60 4-Pin SOT-227 | Vishay | Active | 3~7 Days | 5,471 | |
| STE100N20 | Featuring N-channel silicon technology, the STE100N20 is a high-performance power MOSFET designed for demanding applications | STMicroelectronics NV | 3~7 Days | 1 | ||
| FA38SA50LC | Power MOSFET with 500V Voltage Rating and Single N-Channel Configuration | Vishay | Discontinued | 3~7 Days | 6,223 | |
| APT100M50J | APT100M50J is a discrete semiconductor module employing MOSFET technology | Microchip Technology | Active | 3~7 Days | 6,419 | |
| APT20M11JFLL | N Channel SOT-227B-4 MOSFETs ROHS, 200V 176A 11mΩ@88A, 10V 5V@5mA | Microchip Technology | Active | 3~7 Days | 3,811 | |
| APT20M11JLL | APT20M11JLL Module: ISOTOP Single Transistor, Rated for 200V, Screw Mounting, Handles up to 704A | Microchip Technology | Active | 3~7 Days | 6,737 | |
| APT20M11JVR | N-Channel power transistor rated for 200V and 175A | Microchip Technology | 3~7 Days | 6,359 | ||
| APT2X31D60J | 00V 30A 85ns 4-Pin SOT-227 Tube Rectifier Diode Switching | Microsemi Corporation | Active | 3~7 Days | 7,995 | |
| APT2X61S20J | Product APT2X61S20J is a Schottky barrier diode (SBD) conforming to ROHS standards | Microchip Technology | Active | 3~7 Days | 6,284 | |
| APT2X61D120J | DIODE MODULE 1.2KV 53A ISOTOP | Microsemi Corporation | Active | 3~7 Days | 3,163 | |
| APT40DR160HJ | SOT-227 Tube Diode Rectifier Bridge rated at 1.6KV and 40A | Microsemi Corporation | Active | 3~7 Days | 4,253 | |
| APT41F100J | APT41F100J Discrete Semiconductor Modules FREDFET MOS8 1000 V 41 A SOT-227 | Microchip Technology | Active | 3~7 Days | 6,229 | |
| APT60DF60HJ | Single Diode Rectifier Bridge with 600V and 90A Rating | Microsemi Corporation | Active | 3~7 Days | 3,049 | |
| DMA200X1600NA | SOT227B diode module rated at 2x100A and 1600V | IXYS Corporation | Active | 3~7 Days | 4,923 | |
| DSA300I100NA | Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 | IXYS Corporation | 3~7 Days | 6,061 | ||
| DSA300I45NA | Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-2 | IXYS Corporation | Obsolete | 3~7 Days | 6,658 | |
| IXFN110N60P3 | IXFN110N60P3 is an N-channel SOT-227B MOSFET | IXYS Corporation | 3~7 Days | 4,585 | ||
| IXFN300N10P | N-Channel Power MOSFET | IXYS Corporation | 3~7 Days | 7,134 | ||
| IXFN44N100Q3 | kV 38A SOT227B screw Idm 110A 960W | IXYS Corporation | Active | 3~7 Days | 5,288 | |
| IXTN200N10L2 | 00V 178A transistor | IXYS Corporation | 3~7 Days | 4,892 | ||
| IXYN80N90C3H1 | IGBT transistor IXYN80N90C3H1AH | Littelfuse | Active | 3~7 Days | 5,688 | |
| UFB200FA40 | SOT-227 Ultrafast Double Diode Rectifiers 400V 200A | Vishay | 3~7 Days | 7,705 | ||
| VS-FB180SA10P | N-Channel Power MOSFET with a Voltage Rating of 100V and a Continuous Current Rating of 180A, Packaged in SOT-227 with Four Pins | Vishay | Discontinued | 3~7 Days | 5,340 | |
| VS-FB190SA10 | 27 MOSFET with 190A current rating | Vishay | 3~7 Days | 6,717 | ||
| VS-SA61BA60 | Reliable and robust single-phased diode rectifier solutio | Vishay | Active | 3~7 Days | 3,525 | |
| VS-UFB200FA20P | SOT-227 4-Pin Rectifier Diode Switching 120A 45ns | Vishay | Discontinued | 3~7 Days | 6,230 | |
| VS-UFB200FA40P | High-quality diode array for demanding applicatio | Vishay | Discontinued | 3~7 Days | 5,880 | |
| UFB200FA40P | Item Description: Rectifiers capable of handling 400 volts and 240 amps | Vishay | 3~7 Days | 4,081 | ||
| GE25N100D | GE25N100D is a high voltage, fast recovery diode chip with low leakage current. | Vishay | 3~7 Days | 3,289 | ||
| GB2X100MPS12-227 | product GB2X100MPS12-227 | GeneSiC Semiconductor | Active | 3~7 Days | 7,809 | |
| IXXN110N65B4H1 | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | IXYS Corporation | ACTIVE | 3~7 Days | 5,680 | |
| UFB200FA20 | High Voltage Diode Array with 2 Independent Channels, Suitable for DC Applications | Siliconix | OBSOLETE | 3~7 Days | 9,684 | |
| VS-FA72SA50LC | N-channel transistor | Vishay | 3~7 Days | 5,266 | ||
| VS-HFA140FA60 | Rectifiers 600 Volt 140 Amp | Vishay | Active | 3~7 Days | 6,564 | |
| VS-HFA220FA120 | Rectifiers 1200 volt 220 amp | Vishay | Active | 3~7 Days | 7,094 | |
| VS-UFB130FA20 | Rectifiers 130 Amp 200 Volt | Vishay | Active | 3~7 Days | 5,425 | |
| VS-UFB130FA60 | Rectifiers 130 Amp 600 Volt | Vishay | Active | 3~7 Days | 6,859 |
Additional Package/Case