Congratulations On Your Successful Submission
Submission Failure
Module Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| SKM75GB128D | With its N-channel dual IGBT configuration | Semikron | 3~7 Days | 4,498 | ||
| EVK71-050 | 6 Pin Power Bipolar Transistor with NPN Silicon Technology | Fujitsu Limited | 3~7 Days | 6,315 | ||
| EVK31-050 | Two-Element Transistor with 5 Pins | Fujitsu Limited | 3~7 Days | 7,354 | ||
| 7MBR25NF120 | IGBT with 25A collector current and 1200V breakdown voltage | Fujitsu Limited | 3~7 Days | 3,643 | ||
| 7MBR35VM120-50 | Three-phase IGBT Power Integrated Module, 35A, 1200V, V Series | Fujitsu Limited | 3~7 Days | 6,337 | ||
| 2MBI400VB-060-50 | IGBT Module with Dual Diode, 400A, 600V, V Series | Fujitsu Limited | 3~7 Days | 5,876 | ||
| QM75DY-H | NPN Silicon Power Bipolar Transistor rated for 75A I(C), featuring 2 elements and a 7-pin Plastic/Epoxy package | Mitsubishi Electric | 3~7 Days | 7,480 | ||
| QM50HA-H | Unlock new possibilities with our innovative QMHA-H chip, designed for maximum speed and reliability | Mitsubishi Electric | 3~7 Days | 3,456 | ||
| QM50DY-H | The QM50DY-H is a Power Bipolar Transistor characterized by its 50A Collector Current rating | Mitsubishi Electric | 3~7 Days | 4,126 | ||
| MG75Q2YS40 | 75A N-channel Insulated Gate Bipolar Transistor (IGBT) with 1200V Rating, 7-Pin Configuration | Toshiba | 3~7 Days | 6,275 | ||
| MG75N2YS40 | Transistor 75A, 1000V, N-channel IGBT | Toshiba | 3~7 Days | 3,753 | ||
| MG75J2YS50 | 75A, 600V N-channel Insulated Gate Bipolar Transistor (IGBT) with 2-94D1A configuration and 7 pins | Toshiba | 3~7 Days | 4,638 | ||
| MG50Q2YS40 | TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT | Toshiba | 3~7 Days | 3,164 | ||
| MG400Q1US41 | Ideal for Switching and Motor Control Circuits | Toshiba | 3~7 Days | 4,164 | ||
| MG20G6EL1 | NPN silicon power transistor | Toshiba | 3~7 Days | 4,324 | ||
| MG150Q2YS51 | Transistor featuring N-channel IGBT technology designed for a maximum current of 200 A and voltage of 1200 V | Toshiba | 3~7 Days | 6,798 | ||
| MG150Q2YS40 | 7 PIN, Insulated Gate BIP Transistor | Toshiba | 3~7 Days | 6,242 | ||
| MG150N2YS40 | High-Power Electronics Solution for Industrial Automation Applicatio | Toshiba | 3~7 Days | 4,016 | ||
| MG150J2YS50 | 50A, 600V transistor | Toshiba | 3~7 Days | 7,315 | ||
| MG100Q2YS42 | 00A, 1200V, N-CHANNEL IGBT, 7 PIN | Toshiba | 3~7 Days | 7,912 | ||
| 6DI75A-050 | Plastic/Epoxy-packaged Power Bipolar Transistor | Fujitsu Limited | 3~7 Days | 6,875 | ||
| 6DI15A-050 | Power Bipolar Transistor with 15A I(C) and 600V V(BR)CEO | Fujitsu Limited | 3~7 Days | 4,649 | ||
| 2MBI400N-060 | Channel Insulated Gate Bipolar Transistor with 400A I(C) and 600V V(BR)CES | Fujitsu Limited | 3~7 Days | 5,316 | ||
| 2MBI300N-060 | 300A I(C), 600V V(BR)CES, N-Channel | Fujitsu Limited | 3~7 Days | 5,387 | ||
| CM2400HCB-34N | N-Channel Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, MODULE-9 | Mitsubishi Electric | 3~7 Days | 5,238 | ||
| CSNE151-100 | Board Mount Current Sensors with Closed Loop Linear Configuration, providing +/-90 A Range with +/-0.5% Accuracy | Honeywell | 3~7 Days | 4,593 | ||
| GS-R424 | Single DC-DC Module | STMicroelectronics NV | OBSOLETE | 3~7 Days | 5,554 | |
| GS-R51212 | 3-OUTPUT 20W DC-DC REG PWR SUPPLY MODULE | STMicroelectronics NV | 3~7 Days | 3,227 | ||
| PTH05050WAH | 6A, 21.6W DC/DC converter with a 6-pin layout, providing a single output voltage ranging from 0.8V to 3.6V | Texas Instruments | ACTIVE | 3~7 Days | 6,641 | |
| RWS600B-12 | 600W output, 12V AC-DC power supply of standard type | TDK-Lambda | 3~7 Days | 3,064 | ||
| STK672-040 | Precise motor control with advanced current sensing and overcurrent protection | Sanyo Denki | 3~7 Days | 7,669 | ||
| CSNX25 | 5V Output AC/DC Current Sensor with Open Loop Design, 7-Pin Configuration | Honeywell | Active | 3~7 Days | 7,522 | |
| 7MBP100RA060 | Hybrid motor controller | Fujitsu Limited | 3~7 Days | 7,158 | ||
| STK2025 | Professional-grade audio amplification chi | Sanken Electric Co., Ltd | 3~7 Days | 5,207 | ||
| SKM100GB128D | With its advanced features and superior design | Semikron | 3~7 Days | 6,097 | ||
| SKIIP24NAB126V10 | High-power semiconductor device | Semikron | 3~7 Days | 6,617 | ||
| SKIIP23NAB126V1 | 26-Pin N-Channel Insulated Gate Bipolar Transistor (IGBT) Module with 1200V Voltage Rating and 41A Current Capacity | Semikron | 3~7 Days | 7,131 | ||
| SKD146/16-L100 | 0 semipont 6 insulated gate bipolar transistor 125A I(C) 1600V V(BR)CES n-channel 16 pin | Semikron | 3~7 Days | 7,224 | ||
| PS219B4-AST | Simplifies AC motor operations and maintenance | Mitsubishi Electric | 3~7 Days | 5,314 | ||
| PM-L54 | Photoelectric Sensor with Through Beam Technology, 5mm Max Detection, 50mA Output, and Panel Mount Installation | Panasonic Electric Works | 3~7 Days | 6,793 |
Additional Package/Case