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FBGA Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT62F1536M64D8CL-026 WT:B | High-performance memory for demanding mobile applicatio | Micron | 3~7 Days | 3,593 | ||
| MT62F1536M64D8CL-023 WT:B | Enhanced performance with low-power consumpti | Micron | 3~7 Days | 4,415 | ||
| MT40A256M16GE-075E AAT:B | 4GB Parallel Memory | Micron | OBSOLETE | 3~7 Days | 9,448 | |
| MT35XU512ABA2G12-0AAT | Trays SPI FLASH NOR SLC 64MX8 TBGA | Micron | ACTIVE | 3~7 Days | 7,486 | |
| K4AAG165WB-MCTD | High-density DRAM chip package | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 8,858 | |
| S29JL032J70BHI323 | 32Mbit Parallel NOR Flash VFBGA-48 ROHS | Spansion | ACTIVE | 3~7 Days | 5,869 | |
| K4A4G165WF-BCTD | Compliant with ROHS environmental standar | Samsung Electro-Mechanics | 3~7 Days | 2,205 | ||
| K4AAG165WB-MCRC | Product Description: FBGA-96 DRAM ROHS | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 7,222 | |
| KLUCG2K1EA-B0C1 | Advanced -bit MLC e-MMC storage solution for mission-critical systems requiring high reliability, security, and performanc | Samsung Electro-Mechanics | 3~7 Days | 4,288 | ||
| THGBMFG8C4LBAIR | This cutting-edge solution optimizes data processing and retrieval operation | KIOXIA/Toshiba | 3~7 Days | 5,580 | ||
| KLM4G1FEPD-B031 | 4 G NAND Flash, Blank, 1.70 V | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 6,031 | |
| KLM8G1GESD-B04P | Embedded Multi Media Card | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 8,445 | |
| K4A8G045WB-BCPB | Eight gigabyte FBGA-78 DRAM module with RoHS compliance | Samsung Electro-Mechanics | OBSOLETE | 3~7 Days | 8,686 | |
| S29AL008D70BFI020 | 512KX16 Flash chip with 70ns access time and PBGA48 packaging | Spansion | OBSOLETE | 3~7 Days | 7,824 | |
| MT40A1G8SA-062E IT:E | DDR4 SDRAM 8G-Bit 1G X 8 1.2V 78-Pin FBGA DRAM Chip | Micron | OBSOLETE | 3~7 Days | 6,426 | |
| MX69GL642EEXGI-70G | Parallel NOR Flash with Pseudo SRAM | Macronix MXIC | ACTIVE | 3~7 Days | 9,943 | |
| NT6AN256T32AV-J2 | 8Gb LPDDR4 (Dual Data Path) Synchronous DRAM | Nanya | ACTIVE | 3~7 Days | 6,221 | |
| KLM8G1GESD-B03Q | Small storage device | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 6,923 | |
| K4A4G165WE-BCPB | Compact and powerful FBGA package ideal for space-constrained application | Samsung Electro-Mechanics | 3~7 Days | 6,415 | ||
| NT5AD256M16D4-HRI | 96-pin TFBGA DDR4 SDRAM 4Gbit 256Mx16 DRAM Chip | Nanya Technology | OBSOLETE | 3~7 Days | 9,176 | |
| NM1482KSLAXCL-3B | Circuit for storing memories | Nanya | ACTIVE | 3~7 Days | 6,536 | |
| KMQX10013M-B419 | Powerful combo of eMMC and LPDDR3 for optimal performance | Samsung Electro-Mechanics | 3~7 Days | 3,013 | ||
| KLMCG4JEUD-B04Q | Fast and reliable data access for modern systems | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 9,303 | |
| KLM8G1GESD-B04Q | High-capacity storage solution for embedded applications, featuring B of eMMC memory in a compact BGA packag | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 7,347 | |
| K4ZAF325BM-HC14 | Reliable memory component for mission-critical computing systems | Samsung Electro-Mechanics | 3~7 Days | 7,740 | ||
| K4G41325FE-HC25 | High-speed memory chip | Samsung Electro-Mechanics | OBSOLETE | 3~7 Days | 6,082 | |
| K4F6E3D4HB-MHCJ | FBGA-200 DRAM ROHS K4F6E3D4HB-MHCJ | Samsung Electro-Mechanics | OBSOLETE | 3~7 Days | 6,202 | |
| K4F6E304HB-MGCH | The 200-pin FBGA form factor of this chip allows for easy integration into compact mobile device designs | Samsung Electro-Mechanics | OBSOLETE | 3~7 Days | 5,281 | |
| K4AAG085WB-MCRC | High-performance FBGA- DRAM module for advanced memory requirements | Samsung Electro-Mechanics | 3~7 Days | 2,235 | ||
| K4A8G165WC-BCRC | ROHS DDR SDRAM FBGA-96 K4A8G165WC-BCRC | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 8,358 | |
| K4A8G165WB-BIWE | DRAM ROHS FBGA-96 | Samsung Electro-Mechanics | NRND | 3~7 Days | 9,662 | |
| K4A8G165WB-BCRC | Package Size: 96-ball Fine-pitch Ball Grid Array (FBGA) | Samsung Electro-Mechanics | 3~7 Days | 7,756 | ||
| K4A8G085WB-BCPB | FBGA-78 DRAM ROHS | Samsung Electro-Mechanics | 3~7 Days | 2,876 | ||
| K4A4G165WE-BIWE | Description of product K4A4G165WE-BIWE, 4Gb E-die DDR4 SDRAM | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 9,960 | |
| K4A4G165WE-BCRC | Reliable and energy-efficient DDRSDRAM for demanding application | Samsung Electro-Mechanics | 3~7 Days | 4,873 | ||
| K4A4G085WE-BIRC | FBGA-78 DRAM ROHS | Samsung Electro-Mechanics | NRND | 3~7 Days | 9,632 | |
| K4A4G085WE-BCTD | FBGA-78 RoHS DRAM | Samsung Electro-Mechanics | NRND | 3~7 Days | 7,864 | |
| K3RG3G30MM-MGCH | Energy-Efficient M-Die Low Power DDR4 DRAM with 24GB Density | Samsung Electro-Mechanics | ACTIVE | 3~7 Days | 5,692 | |
| S29GL064N90BFI030 | speed applications | Spansion | OBSOLETE | 3~7 Days | 7,751 | |
| S29GL01GS11DHAV20 | V/3.3V 1G-bit 64M x 16 110ns Automotive 64-Pin FBGA Tray | Spansion | ACTIVE | 3~7 Days | 7,910 |
Additional Package/Case