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FBGA Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT18KDF1G72PZ-1G6P1 | 240RDIMM Tray DRAM Module DDR3L SDRAM 8Gbyte | Micron | 3~7 Days | 4,862 | ||
| MT18KDF1G72PDZ-1G6P1 | DDR3 SDRAM 8Gbyte 240RDIMM Tray DRAM Module | Micron | 3~7 Days | 7,964 | ||
| H5AN8G8NMFR-TFC | DDR DRAM 1GX8 CMOS PBGA78 FBGA-78 | SKHYNIX | 3~7 Days | 4,219 | ||
| H5AN4G8NAFR-TFC | DDR4 SDRAM chip for networking and automotive applications. | SKHYNIX | 3~7 Days | 3,329 | ||
| 5CGTFD5C5F27I7N | With its combination of high cell count and cutting-edge technology, this FPGA is ideal for demanding tasks in a range of industries." | Intel | ACTIVE | 3~7 Days | 7,207 | |
| EP2C20F484C6N | Voltage requirement of 1.2V with 484-pin FBGA package | Intel | ACTIVE | 3~7 Days | 9,035 | |
| MT40A256M16GE-075E IT:B | 4Gb 1.2V 96-Pin FBGA | Micron Technology | 3~7 Days | 346 | ||
| MT40A512M16JY-083E AUT:B | FBGA package configuration | Micron | 3~7 Days | 7,680 | ||
| MT41K1G8SN-125 IT:A | DRAM Chip DDR3L SDRAM 8Gbit | Micron | 3~7 Days | 7,645 | ||
| MT41K1G8SN-125:A | 8GBIT Synchronous Dynamic Random Access Memory integrated circuit operating at 800MHz in a 78-pin Fine Ball Grid Array package | Micron | OBSOLETE | 3~7 Days | 4,605 | |
| MT41K512M16HA-125 AIT:A | Product description: DRAM Chip DDR3L SDRAM 8Gbit 512Mx16 1.35V Automotive AEC-Q100 96-Pin FBGA | Micron | 3~7 Days | 4,757 | ||
| MT42L128M32D1GU-25 WT:A | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA | Micron | 3~7 Days | 4,835 | ||
| MT46H64M16LFBF-6IT:B | 1GBIT Parallel 60VFBGA MT46H64M16LFBF-6 IT:B IC DRAM | Micron | OBSOLETE | 3~7 Days | 7,721 | |
| MT46V16M16CY-5B:M | 256Mbit DDR SDRAM Memory Chip operating at 200MHz with 700ps latency, contained in a 60-pin Fine-Pitch Ball Grid Array package | Micron | 3~7 Days | 4,834 | ||
| MT47H256M8EB-25E:C | MT47H256M8EB-25E:C is a DRAM chip that features DDR2 SDRAM technology with a capacity of 2Gbit | Micron | 3~7 Days | 5,896 | ||
| MT47H256M8EB-25E IT:C | DDR2 SDRAM Chip | Micron | 3~7 Days | 5,308 | ||
| MT47H32M16HR-25E IT:G TR | Synchronous dynamic random-access memory | Micron | 3~7 Days | 7,849 | ||
| MT52L512M32D2PF-107 WT:B | Compact Size and Design - Housed in a 178-pin WFBGA package, this chip is small yet powerful, ideal for space-constrained mobile devices | Micron Technology Inc. | ACTIVE | 3~7 Days | 9,561 | |
| MTA9ASF1G72PZ-2G6D1 | DDR4 8GB RDIMM Memory Modules | Micron | 3~7 Days | 6,397 | ||
| MTFC4GLDEA-0MWT | NAND Memory IC with 153-WFBGA packaging | Micron | 3~7 Days | 6,650 | ||
| CY15B102Q-SXM | Military SPI FRAM | Cypress Semiconductor Corp | Active | 3~7 Days | 7,606 | |
| H5TQ4G63CFR-RDC | Reliable distributor | SK Hynix | OBSOLETE | 3~7 Days | 7,444 | |
| MT47H128M16HG-3IT:A | DDR2 SDRAM Chip | Micron Technology | OBSOLETE | 3~7 Days | 7,630 | |
| K4B4G1646E-BCK0 | DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA | Samsung Electro-Mechanics | 3~7 Days | 5,832 | ||
| K4B4G1646D-BYK0 | Key Features: The K4B4G1646D-BYK0 is a high-density memory chip, offering 4Gbit of storage in a compact 96-Pin FBGA form factor | Samsung Electro-Mechanics | Obsolete | 3~7 Days | 6,798 | |
| MT41K128M16JT-125XIT:K | Stock up on DRAM components with the MT41K128M16JT-125 XIT:K bulk option" | Micron | 3~7 Days | 7,790 | ||
| MT29F2G08ABAEAH4-IT | 3.3V Parallel Interface | Micron | 3~7 Days | 6,693 | ||
| MT46H64M16LFCK-6 | 5.5ns CMOS PBGA60 | Micron | 3~7 Days | 3,339 | ||
| K4B4G0846B-HYK0 | Low-voltage 1.35V technology | Samsung Electro-Mechanics | 3~7 Days | 7,622 | ||
| K4B4G1646E-BCNB | DDR3 memory module with a capacity of 256 megabytes per 16-bit word | Samsung Artik | 3~7 Days | 6,740 | ||
| K4B4G0846E-BYMA | High Density Memory Module with 4Gbit Capacity and 1.35V/1.5V Voltage Support | Samsung Electro-Mechanics | 3~7 Days | 7,456 | ||
| H5TC4G63EFR-RDI | Parallel 933 MHz | SKhynix | 3~7 Days | 7,881 | ||
| MT41J64M16LA | MT41J64M16LA is a DDR3 SDRAM chip with 4Gb capacity and a 1.5V power supply voltage. | Micron | 3~7 Days | 7,828 | ||
| MT41J128M16HA-15E | This memory module has a 128MX16 configuration and is constructed using CMOS technology | Micron | 3~7 Days | 5,009 | ||
| MT41J64M16JT-15EIT | MT41J64M16JT-15EIT is a high-speed, low-power DDR3 SDRAM chip with 4Gb capacity. | Micron | 3~7 Days | 5,513 | ||
| H5TQ4G43MFR | H5TQ4G43MFR is a 4Gb LPDDR3 memory chip by SK Hynix, commonly used in mobile devices. | SKHYNIX | 3~7 Days | 3,024 | ||
| MT41K128M16JT-107 IT | MT41K128M16JT-107 IT is a high-speed, low power DDR3 SDRAM chip with 2GB capacity. | Micron | 3~7 Days | 7,403 | ||
| MT41K256M16HA-125AAT | DDR3 SDRAM chip with 4 Gb capacity, 1.25 ns cycle time, 125 MHz clock frequency. | Micron | 3~7 Days | 5,113 | ||
| MT53B1024M32D4NQ-062 WT | MT53B1024M32D4NQ-062 WT is a DDR4 memory chip with 1024Mx32 configuration. | Micron | 3~7 Days | 7,933 | ||
| KLM8G1GEUF-B04Q | High performance flash storage solution for automobiles | Samsung Electro-Mechanics | 3~7 Days | 7,112 |
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