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FBGA-84 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| K4T1G164QF-BCF7 | High density CMOS technology for improved performance | Samsung Electro-Mechanics | 3~7 Days | 3,335 | ||
| MT47H64M16HR-25:H | 400MHz operating frequency | Micron | 3~7 Days | 6,036 | ||
| MT47H64M16HR-25E IT:H | 1Gbit DDR2 SDRAM Chip | Micron | OBSOLETE | 3~7 Days | 7,172 | |
| MT47H64M16HR-25E:H | Advanced memory solution for data-intensive industries, featuring advanced error detection and correction | Micron | OBSOLETE | 3~7 Days | 5,429 | |
| MT47H64M16HR-3 IT:H | High-speed 1Gbit Memory Device with 450 ps Timing | Micron | 3~7 Days | 4,481 | ||
| K4T1G164QQ-HCE6 | Ultra-fast data transmission for seamless device operation | Samsung Electro-Mechanics | Discontinued | 3~7 Days | 3,956 | |
| H5PS1G63EFR | Featuring advanced DDR2 technology, the H5PS1G63EFR chip supports intense computational needs | SK Hynix | 3~7 Days | 6,184 | ||
| MT47H64M16NF-25E IT:M TR | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R | Micron | 3~7 Days | 1 | ||
| K4T1G164QQ-HCF7 | CMOS PBGA84 DDR memory module with 64MX16 configuration | Samsung Electro-Mechanics | 3~7 Days | 4,438 | ||
| K4T1G164QQ-HCE7 | High-speed memory | Samsung Electro-Mechanics | 3~7 Days | 3,729 | ||
| W971GG6JB-25I | This product is ROHS compliant, ensuring that it meets the environmental standards for hazardous substances | Winbond Electronics | 3~7 Days | 6,541 | ||
| MT47H64M16HR-3IT | Advanced Integrated Circuit, offering 1 gigabit capacity for parallel data processing | Micron | 3~7 Days | 4,403 | ||
| H5PS5162GFR-S5C | DDR DRAM 32MX16 0.4NS CMOS PBGA84 | SK Hynix | 3~7 Days | 7,980 | ||
| MT47H128M16RT-25E:C | Storage conditions: -25 to 85 degrees | Micron Technology | ACTIVE | 3~7 Days | 16,800 | |
| MT47H128M16RT-25E IT:C | The MTHRT-E IT:C DDRSDRAM chip by Micron is a high-performance memory solution for demanding applications | Micron Technology | ACTIVE | 3~7 Days | 6,022 | |
| MT47H32M16NF-25E IT:H | 32 Meg x 16 DDR DRAM | Micron Technology | 3~7 Days | 7,667 | ||
| MT47H32M16NF-25E:H | DRAM DDR2 512M 32MX16 FBGA | Micron Technology | ACTIVE | 3~7 Days | 7,472 | |
| MT47H64M16HR-3:H | DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin FBGA T/R/Tray DRAM Chip | Micron | OBSOLETE | 3~7 Days | 3,883 | |
| MT47H64M16NF-25E AIT:M | The MT47H64M16NF-25E AIT:M offers fast data transfer rates and reliable performance." | Micron | Active | 3~7 Days | 7,760 | |
| IS43DR16640A-3DBLI | High-density DRAM chip with 1Gb capacity | ISSI | 3~7 Days | 6,330 | ||
| MT47H32M16HR-3 IT:F | Exclusively for OEMs and CMs | Micron | OBSOLETE | 3~7 Days | 5,078 | |
| S29WS128P0PBFW000 | Operating Speed of 80 nanoseconds | Cypress/Spansion | 3~7 Days | 6,862 | ||
| S29WS512P0PBFW000 | Parallel interface for high-speed communication | Spansion | 3~7 Days | 3,266 | ||
| S29WS128P0SBFW000 | 128 Megabit Capacity | Cypress/Spansion | 3~7 Days | 2,090 | ||
| AS4C64M16D2A-25BCN | Advanced memory solution for high-performance applications and industrial control systems | Alliance | 3~7 Days | 3,480 | ||
| AS4C32M16D2A-25BIN | Reliable and high-capacity memory for demanding computing task | Alliance | 3~7 Days | 5,162 | ||
| AS4C32M16D2C-25BIN | Advanced memory technology for next-generation syste | Alliance Memory | 3~7 Days | 2,452 | ||
| AS4C128M16MD2A-25BIN | Durable and efficient DRAM solution for harsh environments | Alliance Memory | 3~7 Days | 7,982 | ||
| AS4C16M16D2-25BCN | High-performance DDR SDRAM module for robust application | Alliance Memory | 3~7 Days | 3,268 | ||
| MT47H32M16NF-25E AAT:H TR | Advanced technology and high-speed data transfer for efficient processin | Micron Technology | 3~7 Days | 6,728 | ||
| AS4C64M16D2A-25BANTR | Robust and scalable solution for industrial, automotive, and medical device industrie | Alliance Memory | 3~7 Days | 7,478 | ||
| AS4C32M16D2A-25BCNTR | bit Mx -Pin FBGA T/R DRAM Chip with Fast Data Transfe | Alliance Memory | 3~7 Days | 4,227 | ||
| MT47H128M16RT-25EIT:C | The MTHRT-E IT:C DDRSDRAM chip by Micron is a high-performance memory solution for demanding applications | Micron | 3~7 Days | 3,143 | ||
| V59C1G01168QBJ25 | This VCBJ memory chip boasts an impressive storage capacity of b, making it an essential component for any computing devic | PROMOS | 3~7 Days | 3,048 | ||
| AS4C128M16D2A-25BAN | IC DRAM 2GBIT SSTL 18 84TFBGA | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 8,646 | |
| AS4C128M16D2-25BIN | The AS4C128M16D2-25BIN is a high-performance memory chip with a data transfer rate of 800Mbps per pin | Alliance | ACTIVE | 3~7 Days | 7,272 | |
| AS4C128M16D2A-25BCN | AS4C128M16D2A-25BCN is a DDR2 memory chip designed for commercial applications | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 9,899 | |
| AS4C128M16D2A-25BIN | Reliable performance for data-intensive syste | Alliance Memory | 3~7 Days | 4,958 | ||
| AS4C16M16D2-25BINTR | AS4C16M16D2-25BINTR is a TFBGA-84(8x12.5) SDRAM compliant with ROHS standards | Alliance Memory, Inc. | ACTIVE | 3~7 Days | 5,160 | |
| AS4C16M16D2-25BIN | Enhance system performance with this low-latency, high-bandwidth memory solution | Alliance Memory | 3~7 Days | 2,720 |
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