Congratulations On Your Successful Submission
Submission Failure
FBGA Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| MT47H32M16HR-25E:G | High-performance memory module for demanding computing applications, featuring M x DDR DRAM and a fast access time of n | Micron | 3~7 Days | 3,668 | ||
| MT47H128M16HG-3IT | CMOS technology | Micron | 3~7 Days | 7,138 | ||
| H5AN8G6NCJR-VKC | The H5AN8G6NCJR-VKC chip is a high-performance NAND flash memory device designed for use in various electronic devices | SKHYNIX | 3~7 Days | 5,736 | ||
| MT41K1G16DGA-125:A | 16 Gigabyte DDR3 Dynamic Random Access Memory | Micron | 3~7 Days | 4,408 | ||
| MTFC16GAKAECN-4MIT | eMMC MLC EMMC 128G | Micron | 3~7 Days | 5,568 | ||
| H26M41208HPRI | Embedded MultiMedia Card with eMMC 5.1 interface | SKHYNIX | 3~7 Days | 6,520 | ||
| K4G80325FB-HC25 | Premium Memory Component for High-Speed Application | Samsung Electro-Mechanics | 3~7 Days | 3,303 | ||
| K4B4G1646D-BCMA | High-performance computing relies on this modul | Samsung Electro-Mechanics | 3~7 Days | 3,892 | ||
| K4B4G1646D-BCK0 | DRAM Chip DDR3 SDRAM 4Gbit | Samsung Electro-Mechanics | 3~7 Days | 6,207 | ||
| K4M56323PI-HG75 | FBGA-packaged DRAM chip for mobile devices | Samsung Electro-Mechanics | 3~7 Days | 6,208 | ||
| MT40A1G8WE-083E:B | High-density memory component | Micron | 3~7 Days | 6,491 | ||
| KLMAG1JETD-B041006 | MLC NAND Flash Serial e-MMC 1.8V/3.3V 128G-bit 128G x 1 | Samsung Electro-Mechanics | 3~7 Days | 6,000 | ||
| MT47H16M16BG-3 | Cutting-edge memory technology | Micron | 3~7 Days | 3,689 | ||
| K4B1G0846G-BCH9 | CMOS technology | Samsung Electro-Mechanics | 3~7 Days | 3,121 | ||
| AC82PM45 SLB97 | Advanced power management at its core | Intel | 3~7 Days | 5,667 | ||
| MTFC4GLGDQ-AIT:Z | IC FLASH 32GBIT MMC 100LBGA | Micron | 3~7 Days | 7,573 | ||
| MTFC16GJGDQ-AIT:Z | 128G EMMC MLC eMMC MTFC16GJGDQ-AIT Z | Micron | 3~7 Days | 5,724 | ||
| MT36KSF1G72PZ-1G4K1 | Memory modules that are 8GB RDIMM DDR3 for your computer | Micron | 3~7 Days | 4,779 | ||
| MT47H64M16HW-3IT | MT47H64M16HW-3IT is a DDR2 SDRAM chip with 1 Gb capacity, operating at 667 MHz with a 1.8V supply voltage. | Micron | 3~7 Days | 6,736 | ||
| MT41K128M16JT-125AAT:K | This product is a DRAM DDR3 module with a capacity of 2 gigabytes and a memory organization of 128MX16 in FBGA form factor | Micron | 3~7 Days | 5,263 | ||
| MT36HTF1G72PZ-667C1 | MT36HTF1G72PZ-667C1 Memory Modules DDR2 8GB | Micron | 3~7 Days | 7,365 | ||
| K4T2G084QA-HCE6 | DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA68 | Samsung Electro-Mechanics | 3~7 Days | 7,276 | ||
| N2CB2G16BP-CG | High-speed, low-power N2CB2G16BP-CG chip for efficient data processing. | Samsung Electro-Mechanics | 3~7 Days | 6,217 | ||
| MTFC4GLDDQ-4MIT | FLASH Memory IC | Micron | 3~7 Days | 5,983 | ||
| MTA72ASS8G72LZ-2G6D2 | Tray of 64GB DDR4 SDRAM 288LRDIMM Modules | Micron | 3~7 Days | 5,322 | ||
| MT8KTF51264AZ-1G9P1 | DDR DRAM Module | Micron | 3~7 Days | 3,844 | ||
| MT36KSF2G72PZ-1G6P1 | DDR3L SDRAM 16GB RDIMM Module - Trays | Micron | 3~7 Days | 6,485 | ||
| MT18KDF1G72PZ-1G6P1 | 240RDIMM Tray DRAM Module DDR3L SDRAM 8Gbyte | Micron | 3~7 Days | 4,862 | ||
| MT18KDF1G72PDZ-1G6P1 | DDR3 SDRAM 8Gbyte 240RDIMM Tray DRAM Module | Micron | 3~7 Days | 7,964 | ||
| H5AN8G8NMFR-TFC | DDR DRAM 1GX8 CMOS PBGA78 FBGA-78 | SKHYNIX | 3~7 Days | 4,219 | ||
| H5AN4G8NAFR-TFC | DDR4 SDRAM chip for networking and automotive applications. | SKHYNIX | 3~7 Days | 3,329 | ||
| 5CGTFD5C5F27I7N | With its combination of high cell count and cutting-edge technology, this FPGA is ideal for demanding tasks in a range of industries." | Intel | ACTIVE | 3~7 Days | 7,207 | |
| EP2C20F484C6N | Voltage requirement of 1.2V with 484-pin FBGA package | Intel | ACTIVE | 3~7 Days | 9,035 | |
| MT40A256M16GE-075E IT:B | 4Gb 1.2V 96-Pin FBGA | Micron Technology | 3~7 Days | 346 | ||
| MT40A512M16JY-083E AUT:B | FBGA package configuration | Micron | 3~7 Days | 7,680 | ||
| MT41K1G8SN-125 IT:A | DRAM Chip DDR3L SDRAM 8Gbit | Micron | 3~7 Days | 7,645 | ||
| MT41K1G8SN-125:A | 8GBIT Synchronous Dynamic Random Access Memory integrated circuit operating at 800MHz in a 78-pin Fine Ball Grid Array package | Micron | OBSOLETE | 3~7 Days | 4,605 | |
| MT41K512M16HA-125 AIT:A | Product description: DRAM Chip DDR3L SDRAM 8Gbit 512Mx16 1.35V Automotive AEC-Q100 96-Pin FBGA | Micron | 3~7 Days | 4,757 | ||
| MT42L128M32D1GU-25 WT:A | DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA | Micron | 3~7 Days | 4,835 | ||
| MT46H64M16LFBF-6IT:B | 1GBIT Parallel 60VFBGA MT46H64M16LFBF-6 IT:B IC DRAM | Micron | OBSOLETE | 3~7 Days | 7,721 |
Additional Package/Case