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TO-263-3 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| FDB9503L-F085 | FDB9503L-F085 is a P-Channel MOSFET suitable for high-power applications | Onsemi | 3~7 Days | 4,001 | ||
| FQB12P20TM | Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, 800-REEL | Onsemi | 3~7 Days | 4,124 | ||
| IRFS7530TRLPBF | High voltage trench technology transistor | Infineon Technologies | 3~7 Days | 5,281 | ||
| STB100N10F7 | STMicroelectronics STB100N10F7 is an N-channel MOSFET transistor with a current rating of 80 A and a voltage rating of 100 V in a 3-Pin D2PAK package | STMicroelectronics NV | 3~7 Days | 4,606 | ||
| IRF4905SPBF | IRF4905SPBF: Power MOSFET with P-Type Silicon, 55V Voltage Tolerance, and 70A Current Capacity, Encapsulated in a D2PAK Tube | Infineon Technologies | 3~7 Days | 5,148 | ||
| IRF3706SPBF | N-channel MOSFET with HEXFET technology, rated for a maximum voltage of 20V and featuring a low on-resistance of 8.5mΩ with a gate charge of 23nC | Infineon Technologies | 3~7 Days | 5,788 | ||
| IRF2807ZS | Low resistance of 0.0094ohm | Infineon Technologies | 3~7 Days | 3,997 | ||
| IRFS52N15D | D2PAK-3 package configuration | Infineon Technologies | 3~7 Days | 6,526 | ||
| IRF640NS | The TO-263 package design of IRF640NS enables easy installation and heat dissipation for improved performance | Infineon Technologies | 3~7 Days | 7,377 | ||
| BUK768R3-60E | Standard threshold voltage FET | NXP Semiconductors | 3~7 Days | 5,812 | ||
| STGB30V60DF | Short-circuit rugged IGBT | STMicroelectronics NV | Active | 3~7 Days | 7,404 | |
| STGB7NC60HDT4 | Trans IGBT Chip N-channel 600V 25A 80W D2PAK | STMicroelectronics NV | Active | 3~7 Days | 7,396 | |
| TN1215-800G-TR | Thyristor with 800V voltage rating | STMicroelectronics NV | Active | 3~7 Days | 6,491 | |
| AUIRFS4610 | AUIRFS4610 is a high-performance automotive-grade MOSFET that meets the stringent requirements of the AEC-Q101 automotive reliability standard | Infineon Technologies | Obsolete | 3~7 Days | 7,604 | |
| 10ETF12S | 10ETF12S rectifier alternative 78-VS-M3 | Vishay | Discontinued | 3~7 Days | 5,545 | |
| 10ETS08S | 3-Pin D2PAK Diode | Vishay | Discontinued | 3~7 Days | 3,908 | |
| 15ETH06S | Rectifiers 15ETH06S, recommended alternative 78-VS-15ETH06S-M3" | Vishay | Active | 3~7 Days | 3,701 | |
| 20ETF06S | Alternative Recommendation: 78-VS-20ETF06S-M3 Rectifiers" | Vishay | Discontinued | 3~7 Days | 7,380 | |
| 20ETS12S | Substitute for 20ETS12S rectifiers | Vishay | Discontinued | 3~7 Days | 7,696 | |
| 30CTH02S | 30CTH02S Rectifiers recommended alternative 78-VS-M3 | Vishay | 3~7 Days | 5,167 | ||
| BUB323Z | BUB323Z NPN Darlington Bipolar Power Transistor | Onsemi | 3~7 Days | 6,672 | ||
| BUB941ZT | NPN power Darlington ignition coil driver for high voltage applications | STMicroelectronics NV | 3~7 Days | 5,308 | ||
| FCB110N65F | Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 35 A, 110 mΩ, D2-PAK, 800-REEL | Onsemi | 3~7 Days | 5,182 | ||
| FCB290N80 | Power MOSFET, N-Channel, SUPERFET® II, 800 V, 17 A, 290 mΩ, D2PAK, 800-REEL | Onsemi | 3~7 Days | 4,870 | ||
| FDB0105N407L | N-Channel PowerTrench® MOSFET 40 V 460A, 0.8mΩ, 800-REEL | Onsemi | 3~7 Days | 6,155 | ||
| FDB0165N807L | N-Channel PowerTrench® MOSFET 80V, 310A, 1.6mΩ, 800-REEL | Onsemi | Active | 3~7 Days | 4,003 | |
| FDB024N08BL7 | N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ, 800-REEL | Onsemi | Active | 3~7 Days | 3,512 | |
| FDB0260N1007L | N-Channel PowerTrench® MOSFET 100V, 200A, 2.6mΩ, 800-REEL | Onsemi | Active | 3~7 Days | 3,512 | |
| FDB035N10A | N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ, 800-REEL | Onsemi | 3~7 Days | 6,839 | ||
| FDB0630N1507L | N-Channel PowerTrench® MOSFET 150V, 130A, 6.4mΩ, 800-REEL | Onsemi | 3~7 Days | 3,677 | ||
| FDB075N15A-F085 | N-Channel Power Trench® MOSFET 150V, 110A, 5.5mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified | Onsemi | 3~7 Days | 7,546 | ||
| FDB075N15A | N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ, 800-REEL | Onsemi | 3~7 Days | 7,924 | ||
| FDB13AN06A0 | N-Channel PowerTrench® MOSFET, 60V, 62A, 13.5mΩ, 800-REEL | Onsemi | 3~7 Days | 4,480 | ||
| FDB15N50 | Power MOSFET, N-Channel, UniFETTM, 500 V, 15 A, 380 mΩ, D2PAK, 800-REEL | Onsemi | Active | 3~7 Days | 5,607 | |
| FDB2552 | N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ, 800-REEL | Onsemi | 3~7 Days | 6,209 | ||
| FDB2572 | N-Channel PowerTrench® MOSFET 150V, 29A, 54mΩ, 800-REEL | Onsemi | 3~7 Days | 3,257 | ||
| FDB2710 | N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ, 800-REEL | Onsemi | 3~7 Days | 5,233 | ||
| FDB44N25TM | Power MOSFET, N-Channel, UniFETTM, 250V, 44A, 69mΩ, D2PAK, 800-REEL | Onsemi | 3~7 Days | 5,346 | ||
| FDB5800 | N-Channel Logic PowerTrench MOSFET rated at 60V | Onsemi | 3~7 Days | 7,221 | ||
| FDB86102LZ | N-Channel PowerTrench® MOSFET, 100V, 30A, 24mΩ, 800-REEL | Onsemi | 3~7 Days | 7,722 |
Additional Package/Case