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BGA-90 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| K4M513233C-DN75 | Advanced synchronous DRAM solution for demanding system requirements, PBGA packag | Samsung Electro-Mechanics | 3~7 Days | 7,318 | ||
| IS42S32160C-75BLI | The IS42S32160C-75BLI is a dynamic random-access memory (DRAM) chip that offers a high capacity of 512Mbit | ISSI | 3~7 Days | 5,901 | ||
| MT46H16M32LFB5-6 IT:C | Mobile LPDDR SDRAM 512Mbit DRAM Chip | Micron | 3~7 Days | 7,290 | ||
| MT48LC4M32B2B5-6:G | Plastic BGA with 90 pins for easy mounting | Micron | 3~7 Days | 6,328 | ||
| IS42S32160F-75EBLI-TR | Robust memory component for reliable computing operatio | ISSI | 3~7 Days | 3,701 | ||
| IS42S32160F-6BLI-TR | Compact TFBGA package suitable for modern electronics, providing efficient power consumption and reduced PCB space usag | ISSI | 3~7 Days | 2,212 | ||
| IS42S32160F-7BL-TR | Ultra-compact TFBGA package for space-constrained devices | ISSI | 3~7 Days | 3,306 | ||
| IS42RM32160E-75BLI-TR | Memory solution for smartphones and tablets with high capacity | ISSI | 3~7 Days | 5,501 | ||
| IS43LR32640B-5BLI | DRAM Chip Mobile-DDR SDRAM 2Gbit 64Mx32 1.8V 90-Pin TFBGA | ISSI | 3~7 Days | 3,078 | ||
| IS45S32800J-6TLA1-TR | High-performance memory solution for demanding applications, offering rapid data access and reduced latency | ISSI | 3~7 Days | 6,735 | ||
| IS43LR32160C-6BL-TR | Low-power, high-performance DDR SDRAM solution for mobile device | ISSI | 3~7 Days | 6,776 | ||
| IS42VM32800K-6BLI-TR | High-speed DRAM module for mobile devices, featuring operation and Hz bandwidt | ISSI | 3~7 Days | 5,237 | ||
| IS42SM32400H-6BLI-TR | Advanced SDRAM technology enables reliable and efficient data storag | ISSI | 3~7 Days | 7,372 | ||
| IS42VM32400H-6BLI-TR | High-performance Mobile SDRAM for demanding application | ISSI | 3~7 Days | 4,340 | ||
| IS42SM32200M-6BLI-TR | DRAM 64M, 3.3V, Mobile SDRAM, 2Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R | ISSI | 3~7 Days | 6,830 | ||
| IS42VM32200M-75BLI-TR | 512K x 32Bits x 4, Banks Mobile Synchronous DRAM | ISSI | 3~7 Days | 3,620 | ||
| IS42S32800J-6BL | Compact and efficient design enables effective heat dissipation and minimizes power consumption | ISSI | 3~7 Days | 4,216 | ||
| IS42S32400F-7BL | Reliable and efficient memory solution with operating volta | ISSI | 3~7 Days | 5,530 | ||
| IS45S32400F-6BLA2 | Advanced DRAM chip with high capacity and low latenc | ISSI | 3~7 Days | 2,024 | ||
| IS45S32200L-6BLA1 | Advanced SDRAM module with high storage capacity and spee | ISSI | 3~7 Days | 5,345 | ||
| IS45S32200L-7BLA2 | High-density memory solution for automotive systems, AEC-Qcompliant, and operating a | ISSI | 3~7 Days | 3,103 | ||
| IS42VM32160D-6BLI-TR | Low voltage 1.8V operating compatible with modern CPU architectures and energy-efficient systems | ISSI | 3~7 Days | 4,053 | ||
| IS42S32800G-6BLI-TR | High-performance DRAM module for demanding application | ISSI | 3~7 Days | 6,116 | ||
| IS43LR32160B-6BLI | High-performance RAM for mobile devices, with B capacity and Hz spee | ISSI | 3~7 Days | 4,108 | ||
| IS42VM32160D-6BLI | High-density memory solution for mobile devices, laptops and desktop | ISSI | 3~7 Days | 7,368 | ||
| IS42S32800D-6BI | High-speed memory chip for data-intensive applications | ISSI | 3~7 Days | 5,792 | ||
| IS45S32800D-6BLA1 | Advanced SDRAM chip for reliable data storage and processing | ISSI | 3~7 Days | 5,429 | ||
| IS42S32200L-7BLI-TR | Ruggedized and reliable SDRAM component for harsh environments, ensuring stable data transfer and reduced errors | ISSI | 3~7 Days | 4,871 | ||
| IS42S32160D-6BLI-TR | DRAM 512M, 3.3V, SDRAM, 16Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT, T&R | ISSI | 3~7 Days | 2,808 | ||
| IS61WV51232BLL-10BLI-TR | Advanced asynchronous SRAM technology for improved reliabilit | ISSI | 3~7 Days | 5,025 | ||
| IS42VM32100D-75BLI | DRAM 32M, 1.8V, Mobile SDRAM, 1Mx32, 133Mhz, 90 ball BGA (8mmx13mm) RoHS, IT | ISSI | 3~7 Days | 3,653 | ||
| IS42VM32100D-6BLI | DRAM 32M, 1.8V, Mobile SDRAM, 1Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT | ISSI | 3~7 Days | 2,593 | ||
| IS43LR32400G-6BL | Ultra-thin package enables increased storage capacity and performanc | ISSI | 3~7 Days | 5,774 | ||
| IS42SM32400H-75BLI | Reliable bit M-SDRAM module suitable for industrial and commercial u | ISSI | 3~7 Days | 3,316 | ||
| IS42RM32800K-6BLI | Memory-intensive applications such as gaming and video streaming require this chip's speed | ISSI | 3~7 Days | 7,251 | ||
| IS42S32160F-7BLI-TR | High-performance SDRAM module perfect for industrial automation applications ( characters | ISSI | 3~7 Days | 2,368 | ||
| IS42S32800J-7BL-TR | Compact and reliable m package ideal for embedded system | ISSI | 3~7 Days | 6,978 | ||
| IS42S32160F-75EBLI | High-speed SDRAM chip for advanced computing application | ISSI | 3~7 Days | 7,657 | ||
| IS42VM32160D-75BLI | This SDRAM module features advanced error correction and supports up to 16 million bytes of data transfer | ISSI | 3~7 Days | 7,723 | ||
| IS42S32800J-6BLI-TR | High-capacity SDRAM module designed for high-performance applications, providing fast and reliable access to stored dat | ISSI | 3~7 Days | 2,127 |
Additional Package/Case