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BGA-84 Related Product
| Part Number | Description | Brand | Lifecycle Status | Cargo cycle | In Stock | Operation |
|---|---|---|---|---|---|---|
| HY5PS1G1631CFP-S5 | HY5PS1G1631CFP-S5 is a DDR2 SDRAM chip commonly used in electronic devices for its high-speed data transfer capabilities | SKHYNIX | 3~7 Days | 5,396 | ||
| K4T51163QJ-BCE6 | DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin FBGA | Samsung Electro-Mechanics | 3~7 Days | 5,698 | ||
| K4T1G164QF-BCE6 | 0.45 nanoseconds | Samsung Electro-Mechanics | 3~7 Days | 500 | ||
| K4T1G164QE-HCE6 | Advanced PBGA84 packaging for durability and stability | Samsung Electro-Mechanics | 3~7 Days | 4,906 | ||
| HY5PS561621AFP-25 | Cutting-edge DDR Synchronous Dynamic Random Access Memory module | SK Hynix | 3~7 Days | 7,891 | ||
| W971GG6KB-25I | IC DRAM 1GBIT PARALLEL 84WBGA | Winbond Electronics | 3~7 Days | 6,940 | ||
| K4T51163QE-ZCE6 | 0.45 ns latency | Samsung Electro-Mechanics | 3~7 Days | 7,555 | ||
| H5PS1G63EFR-Y5C | Elevate Your Computing Experienc | SKHYNIX | 3~7 Days | 4,685 | ||
| IS43DR16320B-3DBLI | DDR DRAM, 32MX16, 0.45ns | ISSI | Obsolete | 3~7 Days | 7,668 | |
| MT47H64M16HR-37E | MT47H64M16HR-37E is a high-performance DDR2 SDRAM chip with 1Gb density and 800Mbps speed. | Micron | 3~7 Days | 4,197 | ||
| IS43DR16320C-3DBLI | Fast and secure DDR2 SDRAM solution for demanding applications | ISSI | 3~7 Days | 2,717 | ||
| IS43DR16640C-3DBL | IS43DR16640C-3DBL is a DRAM chip with DDR2 SDRAM technology, offering 1Gbit of memory in a 64Mx16 configuration | ISSI | ACTIVE | 3~7 Days | 8,916 | |
| IS46DR16320D-3DBLA2-TR | Advanced AEC-Qqualified product for ruggedized industrial us | ISSI | 3~7 Days | 4,430 | ||
| IS43DR16320D-3DBLI-TR | Low-power consumption and high-speed performance make this chip ideal for modern systems | ISSI | 3~7 Days | 2,363 | ||
| IS43DR16640C-25DBL-TR | DRAM 1G, 1.8V, DDR2, 64Mx16, 400Mhz a. CL5, 84 ball BGA (8mmx12.5mm) RoHS, T&R | ISSI | 3~7 Days | 6,948 | ||
| IS43DR16320D-25DBL-TR | High-performance, low-power consumption memory for robotics and automation | ISSI | 3~7 Days | 3,530 | ||
| IS43DR16320E-3DBL-TR | Compact -ball BGA package for space-constrained applicatio | ISSI | 3~7 Days | 3,637 | ||
| IS46DR16640C-25DBLA2 | High-performance DDRmemory module for automotive applications, suitable for -°C to C temperature | ISSI | 3~7 Days | 4,856 | ||
| IS43DR16160B-3DBL | Premium quality DRAM chip for reliable performance and scalability | ISSI | 3~7 Days | 2,320 | ||
| IS46DR16640B-25DBLA1-TR | High-capacity DRAM chip for demanding applicatio | ISSI | 3~7 Days | 2,459 | ||
| IS43DR16160B-25DBL | DRAM 256Mb, 1.8V, 400MHz 16Mx16 DDR2 SDRAM | ISSI | 3~7 Days | 2,845 | ||
| IS46DR16320E-3DBLA1-TR | Designed for high-capacity storage, this module provides a seamless integration for computing systems | ISSI | 3~7 Days | 3,506 | ||
| IS46DR16640C-3DBLA2 | Powerful DDR SDRAM module for robust computing need | ISSI | 3~7 Days | 4,602 | ||
| IS46DR16640C-3DBLA1 | Ultra-dense DDR SDRAM module optimized for power efficiency and performance | ISSI | 3~7 Days | 7,580 | ||
| IS43DR16320C-3DBLI-TR | Low-voltage operation for energy efficiency | ISSI | 3~7 Days | 4,631 | ||
| IS43DR16320D-25DBL | Store and retrieve large amounts of data quickly and efficiently with our ISDR B drive, ideal for industrial control systems and medical device | ISSI | 3~7 Days | 7,701 | ||
| IS43DR16640C-25DBLI-TR | High-performance DDR SDRAM module for reliable data storage | ISSI | 3~7 Days | 4,938 | ||
| AD9973BBCZ | AFE Video 2 ADC 14bit 1.8V 84-Pin CSP-BGA Tray | Analog Devices Inc. | OBSOLETE | 3~7 Days | 8,236 | |
| AD9977BBCZ | Enhance system reliability with AD99xxBBCZ's robust signal processing capabilities | Analog Devices Inc. | 3~7 Days | 4,914 | ||
| AD9977BBCZRL | AFE General Purpose 2 ADC 14bit 1.8V 84-Pin CSP-BGA T/R | Analog Devices Inc. | ACTIVE | 3~7 Days | 8,206 | |
| IS43DR16128-3DBLI | 333Mhz DDR2 memory | ISSI | OBSOLETE | 3~7 Days | 8,986 | |
| IS43DR16128C-25DBL | 2Gbit 128Mx16 Memory Module | Issi, Integrated Silicon Solution Inc | 3~7 Days | 2,206 | ||
| IS43DR16128C-3DBL-TR | DRAM chip utilizing DDR2 SDRAM technology, providing a 2-gigabit capacity in a 128Mx16 configuration, with a voltage requirement of 1 | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 7,691 | |
| IS43DR16128C-3DBLI-TR | Gbit DRAM chip DDR2 SDRAM | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 8,054 | |
| IS43DR16128C-25DBLI-TR | Low-power, high-capacity SDRAM chip for industrial automation | ISSI | 3~7 Days | 5,595 | ||
| IS43DR16128C-3DBLI | DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin TW-BGA | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,866 | |
| IS43DR16160B-37CBL | DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin TW-BGA | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 6,382 | |
| IS43DR16160B-37CBL-TR | DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin TW-BGA T/R | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 6,762 | |
| IS43DR16160B-37CBLI-TR | DRAM Chip DDR2 SDRAM 256Mbit | ISSI, Integrated Silicon Solution Inc | ACTIVE | 3~7 Days | 9,620 | |
| IS43DR16320C-25DBLI | Reliable and efficient data transfer up to | ISSI | 3~7 Days | 3,689 |
Additional Package/Case