FDB33N25TM Overview

The FDB33N25TM is a member of onsemi's UniFET™ high voltage MOSFET family, designed with planar stripe and DMOS technology. It features a maximum drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 33A at 25°C.

 FDB33N25TM

With a low on-resistance of 94mΩ at 10V gate-source voltage (Vgs), it ensures efficient power handling and minimal voltage drop. This MOSFET also boasts a typical gate charge of 36.8nC, reducing switching losses, and a low reverse transfer capacitance (Crss) of 39pF, enhancing stability. Additionally, it is 100% avalanche tested and compliant with Pb-Free and RoHS standards, making it suitable for various applications including PDP TVs, lighting systems, UPS units, and AC-DC power supplies.

 

FDB33N25TM N-channel

The FDB33N25TM is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) with a Drain-Gate-Source (DGS) configuration.

FDB33N25TM N-channel

Drain (D): The drain terminal is where the output current flows out of the device. In most applications, it is connected to the load or to a power supply.

 

Gate (G): The gate terminal is responsible for controlling the flow of current between the source and drain terminals. By applying a voltage to the gate, the conductivity of the MOSFET channel can be controlled, allowing the device to switch on and off.

 

Source (S): The source terminal is where the current enters the MOSFET. It serves as the reference point for the drain current and completes the current path through the device.

 

MARKING DIAGRAM

MARKING DIAGRAM

 

3D Models

Symbol

Symbol

Footprint

Footprint

3D model

3D model

 

FDB33N25TM Specifications

Parameter

Description

Manufacturer

onsemi

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250 V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

94mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2135 pF @ 25 V

Power Dissipation (Max)

235W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

 

MOSFET MAXIMUM RATINGS (Tc=25℃)

MOSFET MAXIMUM RATINGS

FDB33N25TM Features

  • Low On-Resistance (RDS(on)): Maximum RDS(on) of 94 mΩ at VGS = 10V, ID = 16.5A ensures efficient power handling and minimal voltage drop across the MOSFET.
  • Low Gate Charge: Typical gate charge of 36.8 nC reduces switching losses and improves overall efficiency in power management applications.
  • Low Crss: Typical Crss (reverse transfer capacitance) of 39 pF minimizes the risk of unwanted coupling effects, enhancing stability and reliability in circuit operation.
  • 100% Avalanche Tested: Ensures robustness and reliability under high-voltage and high-current conditions, making the device suitable for demanding applications where ruggedness is critical.
  • Pb-Free and RoHS Compliant: These devices are manufactured without the use of lead (Pb) and comply with the Restriction of Hazardous Substances (RoHS) directive, aligning with environmental and regulatory standards.

 

Overall, the FDB33N25TM MOSFET offers excellent performance characteristics including low on-resistance, gate charge, and Crss, along with reliability assurance through avalanche testing, and environmental compliance with Pb-Free and RoHS standards.

 

FDB33N25TM Application & uses

FDB33N25TM MOSFET offers reliable performance and efficient power management capabilities, making it well-suited for a range of applications including PDP TVs, lighting systems, UPS units, and AC-DC power supplies.

 

PDP TV (Plasma Display Panel Television): The FDB33N25TM MOSFET can be utilized in the power supply and control circuits of Plasma Display Panel (PDP) televisions. It helps regulate and manage power flow efficiently within the TV, ensuring stable operation and high performance.

 

Lighting: In lighting applications, the FDB33N25TM can be employed in various components such as LED drivers, ballasts, and control circuits. It aids in controlling the current flow and voltage regulation, contributing to energy-efficient and reliable lighting solutions for residential, commercial, and industrial settings.

 

Uninterruptible Power Supply (UPS): The FDB33N25TM MOSFET is suitable for use in UPS systems to ensure continuous and reliable power delivery during mains power failure or fluctuations. It helps regulate the charging and discharging of batteries, as well as the conversion of DC power to AC power, enhancing the overall efficiency and performance of UPS units.

 

AC-DC Power Supply: In AC-DC power supply applications, the FDB33N25TM can be integrated into various stages of the power conversion process, including rectification, filtering, and regulation. It assists in converting alternating current (AC) from the mains supply to direct current (DC) suitable for powering electronic devices, ensuring stable and well-regulated output voltage for consistent device operation.

 

The FDB33N25TM related circuits and waveforms include a Gate Charge Test Circuit & Waveform, a Resistive Switching Test Circuit & Waveform, and an Unclamped Inductive Switching Test Circuit & Waveform. These circuits and waveforms are used to evaluate and characterize the performance of the MOSFET in terms of gate charging behavior, resistive switching characteristics, and response to inductive loads, providing insights into its switching efficiency, speed, and robustness under various operating conditions.

Gate Charge Test Circuit & Waveform

Gate Charge Test Circuit & Waveform

 

Resistive Switching Test Circuit & Waveforms

Resistive Switching Test Circuit & Waveforms

 

 Unclamped Inductive Switching Test Circuit & Waveforms

 Unclamped Inductive Switching Test Circuit & Waveforms

 

FDB33N25TM Package Information

The FDB33N25TM is available in the TO-263-3 package, also known as D2PAK (2 Leads + Tab), and TO-263AB package. These packages provide efficient surface mount mounting options for easy integration into electronic circuits, offering a balance between compact size and thermal performance to ensure reliable operation in various applications.

FDB33N25TM Package Information

 

Manufacturer

ON Semiconductor is a semiconductor supplier company that designs, manufactures, and markets a wide range of semiconductor products. The company provides a comprehensive portfolio of power and signal management, logic, discrete, and custom devices for various applications across diverse end markets, including automotive, industrial, computing, consumer, and communications. ON Semiconductor's products include power management ICs, analog integrated circuits, sensors, imaging solutions, and custom ASICs.

 

Headquartered in Phoenix, Arizona, ON Semiconductor operates a global network of manufacturing facilities, design centers, and sales offices to serve its customers worldwide. The company focuses on delivering innovative semiconductor solutions to address the evolving needs of the electronics industry.

 

Datasheet PDF

Download FDB33N25TM datasheet PDF here>>

 

FDB33N25TM FDB33N25TM

Onsemi

Single FETs, MOSFETs

3~7 Days

In Stock:5398



FAQ

  • Is FDB33N25TM suitable for automotive applications?

    Yes, it is suitable for automotive applications where high-current power switching is required. It meets automotive-grade reliability standards and is designed to withstand harsh operating conditions encountered in automotive environments.

  • What are the precautions to consider when using FDB33N25TM?

    When using FDB33N25TM, it is important to ensure proper gate drive voltage and current, avoid exceeding the maximum rated voltage and current limits, and provide adequate heat sinking to dissipate the generated heat during operation.

  • Can FDB33N25TM be used for high-frequency switching applications?

    While FDB33N25TM is primarily designed for general-purpose power switching applications, it can be used for moderate-frequency switching applications. However, for high-frequency switching applications, it is essential to consider factors such as gate drive requirements, switching losses, and thermal management.

  • What is the gate threshold voltage of FDB33N25TM?

    The gate threshold voltage (VGS(th)) is typically between 2.0 volts and 4.0 volts, indicating the minimum voltage required to turn the MOSFET on.

  • Is FDB33N25TM RoHS compliant?

    Yes, it is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it does not contain hazardous materials such as lead, mercury, cadmium, and hexavalent chromium.

  • What is the operating temperature range of FDB33N25TM?

    The operating temperature range is typically between -55°C and +150°C, allowing for reliable operation in a wide range of environmental conditions.

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