CUS520H3F Schottky Barrier Diode: Overview, Specs, Applications, and Equivalents

Description

The CUS520H3F is a high-efficiency Schottky Barrier Diode (SBD) designed for fast switching and low forward voltage drop applications. Manufactured by Toshiba, this diode is optimized for use in power management, voltage clamping, and high-frequency rectification circuits. Its compact SOD-323F package allows integration in space-constrained devices, such as portable electronics and automotive modules, where efficiency and heat management are critical.

Unlike conventional PN junction diodes, Schottky diodes like the CUS520H3F use a metal-semiconductor junction, resulting in faster switching and lower energy loss. This makes it an ideal choice for modern power electronics systems demanding high performance and compactness.

Key Features

● Low forward voltage (VF) — minimizes power loss and heat generation

● High-speed switching — supports high-frequency applications

● Low reverse leakage current — improves circuit stability and efficiency

● Compact surface-mount package (SOD-323F)

● High reliability and long lifecycle

● Suitable for both power line and signal line rectification

Technical Specifications

Pin Configuration and Functions

The CUS520H3F features two terminals in a SOD-323F package:

1. Anode (A) — Connected to the positive side of the circuit.

2. Cathode (K) — Marked by a line on the package; connected to the negative side.

Function: When forward-biased (Anode > Cathode), the diode conducts current with minimal voltage drop. When reverse-biased, it blocks current to protect the circuit.

Typical Applications

The CUS520H3F is suitable for a wide range of applications where speed, size, and efficiency matter:

● DC-DC converters

● Switching power supplies

● Reverse polarity protection

● Voltage clamping and OR-ing circuits

● Battery protection circuits

● High-frequency rectifiers

● Signal demodulation circuits

Equivalent / Alternative Parts

If the CUS520H3F is unavailable or a design requires alternatives, the following equivalents may be considered:

Advantages

● Fast recovery time: Supports high-frequency circuits with minimal delay.

● Low power loss: Improves energy efficiency in switching systems.

● Compact and lightweight: Ideal for portable and embedded electronics.

● Stable performance across temperature range: Reliable for automotive and industrial use.

● Simplifies thermal design: Due to reduced heat dissipation needs.

Limitations

● Lower reverse voltage rating: Typically limited to 20V, unsuitable for high-voltage circuits.

● Slightly higher leakage current than PN diodes, especially at elevated temperatures.

● Limited surge handling capability — not designed for heavy current spikes.

● ESD sensitivity: Requires proper handling during PCB assembly.

Package Information

● Package Type: SOD-323F

● Mounting: Surface-mount (SMT)

● Package Dimensions (approx.):

○ Length: 1.6 mm

○ Width: 0.8 mm

○ Height: 0.6 mm

● Polarity Marking: Cathode identified by a white or black line.

The compact SOD-323F package helps reduce PCB footprint while maintaining adequate heat dissipation performance.

Manufacturer Information

● Manufacturer: Toshiba Semiconductor & Storage Products

● Product Series: CUS Series

● RoHS Compliance: Yes

● REACH Status: Compliant

● Halogen-Free: Yes

Toshiba is a reputable global manufacturer known for high-quality semiconductor components, including discrete diodes, MOSFETs, and ICs, widely used in automotive, industrial, and consumer applications.

Design-in Tips

3. Derating: Operate the diode at 70–80% of its rated current and voltage to improve reliability.

4. Thermal Management: Ensure adequate copper area under the cathode pad to dissipate heat effectively.

5. Reverse Protection: Add transient voltage suppression (TVS) diodes if voltage spikes may exceed 20V.

6. Soldering: Follow Toshiba’s reflow profile guidelines to prevent damage during assembly.

7. Paralleling: Avoid using multiple Schottky diodes in parallel unless matched, as forward voltage variations can cause uneven current sharing.

Lifecycle Status & PCN/PDN Notes

As of the latest update, the CUS520H3F is listed as Active in Toshiba’s product portfolio. There are no Product Change Notices (PCNs) or Product Discontinuation Notices (PDNs) currently affecting this part. However, always verify with official Toshiba documentation before large-scale production.

Conclusion

The CUS520H3F Schottky Barrier Diode stands out for its blend of compact design, low forward voltage, and fast switching performance. It is a proven choice for DC-DC converters, power management modules, and portable devices where efficiency and thermal stability are vital.

With broad availability and Toshiba’s strong reliability record, the CUS520H3F remains a dependable, cost-effective solution for modern electronic designs.

Frequently Asked Questions (FAQ)

Q1. What is the main difference between the CUS520H3F and regular silicon diodes?

A: The CUS520H3F has a lower forward voltage drop (around 0.45V) and much faster switching speed, making it ideal for high-efficiency circuits.

Q2. Can I use the CUS520H3F for reverse polarity protection in battery circuits?

A: Yes, it’s commonly used for that purpose due to its low VF, which minimizes voltage loss across the protection path.

Q3. What is the maximum operating frequency for the CUS520H3F?

A: It supports operation in the MHz range, suitable for high-frequency rectification and signal demodulation.

Q4. Is the CUS520H3F suitable for automotive applications?

A: Yes, it meets high reliability standards and can operate at temperatures up to 150°C, which fits automotive-grade requirements.

Q5. Are there higher voltage versions of this diode?

A: Yes, alternatives like the CUS540H3F or SS24 offer higher reverse voltage ratings (up to 40V).

Related Resources:

● CUS520H3F Datasheet – Toshiba Semiconductor (PDF)

● Schottky Diodes Application Note – Toshiba Technical Library

CUS520

Toshiba

Memory

3~7 Days

In Stock：6,163

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